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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Defects in silicon induced by high energy helium implantation and their evolution during anneals
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Defects in silicon induced by high energy helium implantation and their evolution during anneals

机译：高能氦注入引起的硅缺陷及其在退火过程中的演变

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Transmission electron microscopy has been used to study the bubbles and the extended defect formation in crystalline Si implanted with helium at a dose of 10(17) cm(-2) at 1.6 MeV and annealed at 800 degreesC, as a function of the annealing time of 16.7-1020 min. Below the bubble layer located near the mean projected range, Frank dislocation loops are observed in addition to long rod-like {113} defects. During the initial annealing stage only Frank loops bound to bubbles are present. Whereas the bubble morphology does not change greatly during longer annealing times, we observe a strong evolution of extended defects located behind the band of bubbles. Indeed, after a 30 min annealing, Frank loops and (113) defects resulting from the precipitation of Si interstitials are observed. Then the dissolution of {113} defects takes place and only Frank loops remain. The Frank loops are homogeneously distributed up to 500 nm below the bubble layer and are of equal size. After a 1020 min anneal, no more extended defects are observed behind the buried layer. These results are discussed and compared with those obtained after keV implantation. [References: 17]
机译：透射电子显微镜已被用于研究在1.6 MeV下以10（17）cm（-2）的剂量注入氦气并在800℃退火的晶体硅中的气泡和扩展的缺陷形成，该退火时间是退火时间的函数16.7-1020分钟在靠近平均投影范围的气泡层下方，除了长棒状{113}缺陷外，还观察到了弗兰克位错环。在初始退火阶段，仅存在与气泡结合的Frank环。尽管气泡形态在较长的退火时间内不会发生很大变化，但我们观察到位于气泡带后方的延伸缺陷的强烈演化。实际上，经过30分钟的退火后，观察到了由Si间隙沉积引起的Frank环和（113）缺陷。然后{113}缺陷的溶解发生，仅保留Frank环。 Frank回路在气泡层下方均匀分布到500 nm，并且大小相等。退火1020分钟后，在掩埋层后面没有观察到更多的延伸缺陷。对这些结果进行了讨论，并与keV植入后获得的结果进行了比较。 [参考：17]

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