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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Hydrogen-implantation induced silicon surface layer exfoliation
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Hydrogen-implantation induced silicon surface layer exfoliation

机译：氢注入引起的硅表面层剥落

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The physical mechanisms of hydrogen-induced silicon surface cleavage were investigated using the combination of cross section transmission electron microscopy (XTEM) and Rutherford back-scattering spectrometry (RBS) channelling analysis. A [100]-oriented silicon wafer was implanted with 175 keV protons to a dose of 5 x 10(16) cm(-2). The implanted wafer was bonded to a SiO2-capped [100]-oriented silicon wafer and then heated to an elevated temperature of 600 degreesC to produce exfoliation. The damage region of the implanted silicon was examined by XTEM, which revealed the presence of hydrogen-filled platelets. The depth distribution of the implantation damage was also monitored by RES in the channelling condition in the as-implanted state as well as after the cleavage of the silicon wafer. A comparison of the RES and XTEM indicates that the nucleation of hydrogen-filled microcavities and the cleavage of the silicon wafer take place above the hydrogen concentration peak near the implantation damage peak, revealing the crucial role of the implantation damage in the crystal in terms of hydrogen-induced silicon surface layer exfoliation. [References: 24]
机译：结合截面透射电子显微镜（XTEM）和卢瑟福背散射光谱（RBS）通道分析，研究了氢诱导的硅表面分裂的物理机理。在[100]取向的硅晶片上注入175 keV质子，剂量为5 x 10（16）cm（-2）。将植入的晶片粘结到SiO2封端的[100]取向的硅晶片上，然后加热到600摄氏度的高温以产生剥落。通过XTEM检查了注入的硅的损伤区域，该区域显示存在充氢的血小板。还在植入状态下以及在硅晶片切割之后的沟道条件下，通过RES监测植入损伤的深度分布。 RES和XTEM的比较表明，充氢微腔的形核和硅片的裂解发生在靠近注入损伤峰的氢浓度峰上方，这表明了晶体中注入损伤的关键作用在于：氢诱导的硅表面层剥落。 [参考：24]

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