首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Phase formation sequences in the silicon-phosphorus system: Determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical model
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Phase formation sequences in the silicon-phosphorus system: Determined by in-situ synchrotron and conventional X-ray diffraction measurements and predicted by a theoretical model

机译:硅-磷系统中的相形成顺序:通过原位同步加速器和常规X射线衍射测量确定,并通过理论模型预测

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The phase formation sequences of Si-P alloy thin films with P concentrations between 20 and 44at.% have been studied. The samples were annealed at progressively higher temperatures and the newly formed phases were identified both after each annealing step by ex-situ conventional X-ray diffraction (XRD) and continuously by in-situ synchrotron XRD. It was found that Si was the only phase to form in a sample with 20at.% P since the evaporation of P at the crystallization temperature prevented phosphides from forming. For a sample with 30at.% P, the Si12P5 phase formed prior to the SiP phase. For samples with 35 and 44at.% P, the formation of SiP preceded the formation of the Si12P5 phase. The experimentally determined phase formation sequences were successfully predicted by a proposed model. According to the model, the first and second crystalline phases to form are those with the lowest and next-lowest crystallization temperatures of the competing compounds predicted by the Gibbs free-energy diagram.
机译:研究了P浓度在20%至44at%之间的Si-P合金薄膜的相形成顺序。将样品在逐渐升高的温度下进行退火,并在每个退火步骤之后通过异位常规X射线衍射(XRD)以及通过原位同步加速器XRD连续鉴定出新形成的相。已发现,Si是含20at。%P的样品中唯一形成的相,因为在结晶温度下P的蒸发阻止了磷化物的形成。对于具有30at。%P的样品,Si12P5相先于SiP相形成。对于含35at%和44at。%P的样品,SiP的形成先于Si12P5相的形成。实验确定的相形成序列已通过提出的模型成功预测。根据该模型,要形成的第一和第二结晶相是根据吉布斯自由能图预测的具有竞争性化合物的最低和第二最低结晶温度的相。

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