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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Surface-barrier Si-based photodetectors fabricated by the spray pyrolysis technique
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Surface-barrier Si-based photodetectors fabricated by the spray pyrolysis technique

机译：喷雾热解技术制备的表面势垒硅基光电探测器

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The ITO(-)-n(+) Si epitaxial surface-barrier photodiodes have been fabricated by the spray pyrolysis technique, where ITO is a thin transparent conducting film of tin-doped indium oxide. The study was performed on devices with thin and thick (8 and 25 mu m respectively) high-resistivity epitaxial layers. Quantitative analysis of the current-voltage and capacitance-voltage characteristics reveals that these devices behave like ideal quasi-Schottky devices where the barrier is formed between the ITO film and the silicon high-resistivity epitaxial layer. The design details and performance measurements of the fast-response (the rise time of 2.5 ns at wavelength lambda = 0.91 mu m) photodiodes operated in non-saturated carrier velocity conditions at a low-voltage bias of 10 V and at a non-uniform light absorption are discussed. Special attention is given to the design of radiation-resistant (up to a neutron flux of 3 x 10(14) neutrons cm(-2)) surface-barrier photodiodes at zero-voltage bias. An analysis of the changes in the spectral sensitivity of the neutron-irradiated photodiodes is also addressed in this study. [References: 14]
机译：ITO / n（-）-n（+）Si外延表面势垒光电二极管已通过喷雾热解技术制造，其中ITO是掺锡氧化铟的透明透明导电膜。该研究是在具有薄和厚（分别为8和25μm）高电阻率外延层的器件上进行的。电流-电压和电容-电压特性的定量分析表明，这些器件的行为类似于理想的拟肖特基器件，其中在ITO薄膜和硅高电阻率外延层之间形成了势垒。快速响应（在波长λ= 0.91μm时，上升时间为2.5 ns）在非饱和载流子速度条件下以10 V低压偏置和非均匀电压运行的光电二极管的设计细节和性能测量讨论了光吸收。特别注意在零电压偏压下的抗辐射（最高中子通量为3 x 10（14）中子cm（-2）的表面阻挡光电二极管）的设计。在这项研究中，还对中子辐照光电二极管的光谱灵敏度变化进行了分析。 [参考：14]

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