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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 degrees C in N-2 or wet O-2 ambient
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Structural characterization of Ar+-ion-amorphized 6H-SiC wafers annealed at 1100 degrees C in N-2 or wet O-2 ambient

机译：在N-2或湿式O-2环境中于1100℃退火的Ar +离子非晶化6H-SiC晶片的结构表征

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摘要

In this paper, a structural characterization by Rutherford back-scattering spectrometry in a channelling geometry and transmission electron microscopy of GH-SiC samples amorphized by 170 keV Ar+ ions at room temperature and furnace treated at 1100 degrees C in N-2 or wet oxidizing ambient, is presented. The influence of the ion-damage recovery and oxidation processes on the crystalline quality of the implanted SiC layer is carefully analyzed. This study shows that these processes occur on different time scales. Moreover, the more rapid ion-damage recovery process is found to be essentially independent of the annealing ambient. This process gives rise to a polycrystalline SiC structure composed of a bilayer epitaxial structure of 6H-SiC and columnar 3C-SiC polytype close to the interface with the 6H-SiC substrate and to hexagonal and cubic SiC grains in the uppermost part of the layer. The possible role of the defects, observed at the interface with the 6H-SiC substrate, on the imperfect epitaxial regrowth of the implanted layer is also briefly discussed. [References: 20]
机译：本文采用Rutherford背散射光谱技术，通过沟道几何学和透射电子显微镜对GH-SiC样品进行了结构表征，该GH-SiC样品在室温下被170 keV Ar +离子非晶化，并在N-2或湿氧化环境中在1100℃下进行了炉处理， 被表达。仔细分析了离子损伤恢复和氧化过程对注入的SiC层晶体质量的影响。这项研究表明，这些过程发生在不同的时间尺度上。此外，发现更快的离子损伤恢复过程基本上与退火环境无关。该过程产生了由6H-SiC的双层外延结构和接近与6H-SiC衬底的界面的柱状3C-SiC多型体以及在该层的最上部的六方和立方SiC晶粒组成的多晶SiC结构。还简要讨论了在与6H-SiC衬底的界面处观察到的缺陷对注入层的不完美外延再生长的可能作用。 [参考：20]

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