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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >A study of the photoconductivity and thermoelectric properties of Sn _xS_y optical semiconductor thin films deposited by the spray pyrolysis technique
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A study of the photoconductivity and thermoelectric properties of Sn _xS_y optical semiconductor thin films deposited by the spray pyrolysis technique

机译：喷雾热解技术沉积Sn_xS_y光学半导体薄膜的光电导和热电性质的研究

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In this paper, thin films of tin sulfide (Sn_xS_y) with atomic ratios of y/x=0.25, 0.50, 0.75, 1.00, 1.25 and 1.50 have been prepared on a glass substrate at T=420°C using the spray pyrolysis technique. The initial materials for the preparation of thin films were an alcoholic solution consisting of tin chloride (SnCl_4.5H_2O) and thiourea (CS(NH_3)_2). The prepared thin films were characterized by x-ray diffraction, scanning electron microscopy, energy dispersive x-ray analysis, scanning helium ion microscopy and UV-vis spectroscopy. The photoconductivity and thermoelectric effects of Sn_xS_y thin films have been studied. The Sn_xS_y thin films had a polycrystalline structure with a nearly uniform surface and cluster-type growth. With increasing the atomic ratio of (y/x) in films, the optical gap, photosensitivity, thermal activation energy and Seebeck coefficient changed from 2.72 to 2.37 eV, from 0.05 to 0.78, from 0.07 to 0.48 eV (in the high temperature range) and from +0.17 to -0.22 mV K~(-1) (at T=350 K), respectively. In addition, the structure of tin sulfide thin films tends to a nearly single-crystal state in (001) preferred orientation corresponding to SnS_2 phase with increasing (y/x) ratio. These structure situations considerably influence the photosensitivity and thermoelectric properties of thin films.
机译：在本文中，使用喷雾热解技术在T = 420°C的玻璃基板上制备了原子比为y / x = 0.25、0.50、0.75、1.00、1.25和1.50的硫化锡（Sn_xS_y）薄膜。制备薄膜的初始材料是由氯化锡（SnCl_4.5H_2O）和硫脲（CS（NH_3）_2）组成的醇溶液。通过X射线衍射，扫描电子显微镜，能量色散X射线分析，扫描氦离子显微镜和UV-可见光谱对所制备的薄膜进行表征。研究了Sn_xS_y薄膜的光电导和热电效应。 Sn_xS_y薄膜具有多晶结构，具有几乎均匀的表面和簇状生长。随着膜中（y / x）原子比的增加，光学间隙，光敏性，热活化能和塞贝克系数从2.72到2.37 eV，从0.05到0.78，从0.07到0.48 eV改变（在高温范围内）和分别从+0.17至-0.22 mV K〜（-1）（在T = 350 K时）。另外，随着（y / x）比的增加，硫化锡薄膜的结构趋于在对应于SnS_2相的（001）优选取向上接近于单晶状态。这些结构情况极大地影响了薄膜的光敏性和热电性能。

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