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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance
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Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance

机译：强子和轻子引起的硅辐射缺陷，退火和对检测器性能的影响

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A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on detector parameters. The type of the projectile particle and its energy is considered in the evaluation of the concentration of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, vacancy-impurity complexes (VP, VO, V2O), and divacancy (V-2) formation are taken into account in different irradiation conditions, for different concentrations of impurities in the semiconductor material, for 20 and 0degreesC. The model can be extended to include other vacancy and interstitial complexes. The density of the reverse current in the detector after irradiation is estimated. Comparison with experimental measurements is performed. A special application considered in the paper is the modelled case of the behaviour of silicon detectors operating in the pion field estimated for the LHC accelerator, under continuum generation and annealing. [References: 22]
机译：建立了一种现象学模型来定量解释无游离参数，粒子辐照后硅中主要缺陷的产生，其向平衡方向演化的动力学及其对检测器参数的影响。在评估主要缺陷的浓度时，应考虑弹丸颗粒的类型及其能量。对于半导体材料中不同浓度的杂质，在不同的辐照条件下，要考虑空位间隙an没，间隙迁移到汇，空位杂质复合物（VP，VO，V2O）和空位（V-2）的形成。 20和0°C。该模型可以扩展为包括其他空缺和间隙组织。估计照射后检测器中反向电流的密度。与实验测量值进行比较。本文考虑的一种特殊应用是在连续生成和退火过程中，在为LHC加速器估算的pion场中运行的硅探测器行为的模型化情况。 [参考：22]

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