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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >3D effects on minority carrier recombination in homogeneous silicon wafers
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3D effects on minority carrier recombination in homogeneous silicon wafers

机译：3D对均质硅晶片中少数载流子复合的影响

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Calculation of three-dimensional recombination effects in homogeneous silicon wafers is performed. The current continuity equation for minority carriers with surface recombination boundary conditions is solved in cylindrical coordi nates. The two most important three-dimensional recombination effects are discussed. Lateral diffusion of minority carriers gives rise to a characteristic decay inversely proportional to time. Shell surface recombination should be taken into account when measuring within the minority carrier diffusion length from the wafer edge. The discrepancy between the one-dimensional and the three-dimensional models is discussed. [References: 7]
机译：在均质硅晶片中进行三维复合效应的计算。在圆柱坐标系中求解了具有表面重组边界条件的少数载流子的电流连续性方程。讨论了两个最重要的三维重组效应。少数载流子的横向扩散会引起与时间成反比的特征衰减。在从晶片边缘起的少数载流子扩散长度范围内进行测量时，应考虑外壳表面的重组。讨论了一维模型和三维模型之间的差异。 [参考：7]

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