Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation

Kim HJ.; Lee SH.; Jo J.; Nishihara Y.; Park YJ.

首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation

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Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation

机译：通过低能（270 keV）电子辐照减少硅pn二极管的关断时间

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We developed a new method for lifetime control in silicon power devices, which employs low energy (270 keV) electron irradiation and hydrogen annealing. This method can reduce irradiation cost significantly compared to a conventional method using high energy (2 MeV) protons or electrons. In our measurements, electron-irradiated silicon pn diodes show different turn-off characteristics, after they are annealed in nitrogen or hydrogen atmosphere. Hydrogen-annealed diodes show higher forward voltages and smaller turn-off charges. These results suggest that the defects introduced by low energy electron irradiation are converted to different defects by hydrogen annealing, and that the minority carrier lifetime is reduced due to the new defects. [References: 7]

机译：我们开发了一种用于控制硅功率器件寿命的新方法，该方法采用了低能（270 keV）电子辐照和氢退火。与使用高能量（2 MeV）质子或电子的常规方法相比，该方法可以显着降低辐照成本。在我们的测量中，在氮或氢气氛中退火后，电子辐照硅pn二极管显示出不同的关断特性。氢退火二极管显示出较高的正向电压和较小的关断电荷。这些结果表明，通过氢退火将由低能电子辐射引入的缺陷转化为不同的缺陷，并且由于新的缺陷而缩短了少数载流子的寿命。 [参考：7]

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《Physica Scripta: An International Journal for Experimental and Theoretical Physics》 |2002年第0期|共4页
作者
Kim HJ.; Lee SH.; Jo J.; Nishihara Y.; Park YJ.;
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正文语种 eng
中图分类物理学;
关键词
Proton; Lifetime;

机译：质子;终身;

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1. Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation [J] . Kim HJ., Lee SH., Jo J., Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2002,第0期

机译：通过低能（270 keV）电子辐照减少硅pn二极管的关断时间
2. A measurement of the electron-hole pair creation energy and the Fano factor in silicon for 5.9keV X-rays and their temperature dependence in the range 80-270 K [J] . B.G. Lowe, R.A. Sareen Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2007,第2a3期

机译：5.9keV X射线中硅中电子空穴对产生能和Fano因子的测量及其在80-270 K范围内的温度依赖性
3. Energy loss spectra of low primary energy (E-0 <= 1 keV) electrons backscattered by silicon dioxide [J] . Dapor M Surface Science . 2006,第20期

机译：二氧化硅反向散射的低一次能量（E-0 <= 1 keV）电子的能量损失谱
4. A study on core loss reduction of grain-oriented silicon steel sheets by low energy electron-beam irradiation [C] . Se Jun Park, In Su Cha, Jeong Sik Choi, . 2003

机译：低能电子束辐照降低取向硅钢板铁损的研究
5. 4H-silicon carbide gate turn-off thyristor and merged p-i-n and Schottky barrier diode. [D] . Cao, Lihui. 2000

机译：4H碳化硅栅极截止晶闸管，并合并了p-i-n和肖特基势垒二极管。
6. Holography and Coherent Diffraction Imaging with Low-(30–250 eV) and High-(80–300 keV) Energy Electrons: History Principles and Recent Trends [O] . Tatiana Latychevskaia 2020

机译：全息和相干衍射成像低（30-250eV）和高（80-300 kev）能量电子：历史原则和最近的趋势
7. INFLUENCE OF TEM LOW ENERGY ELECTRON IRRADIATION ON InP DAMAGE STRUCTURE IRRADIATED PREVIOUSLY BY 100 keV Au IONS [O] . A. S. Khalil A, A. Yu. Didyk B 2015

机译：TEm低能电子辐照对100keV au离子辐照Inp损伤结构的影响
8. Inverse Mean Free Path,Stopping Power, CSDA Range,and Straggling in Silicon and Silicon Dioxide for Electrons of Energy [R] . tung, c. j. ashley, j. c. 1976

机译：对于能量<或= 10keV的电子，反平均自由程，停止功率，CsDa范围以及硅和二氧化硅中的混乱。

Reduction of turn-off time in silicon pn diodes by low energy (270 keV) electron irradiation

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