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Nonlinear characteristics of the Fowler-Nordheim plots of carbon nanotube field emission

机译:碳纳米管场发射的Fowler-Nordheim图的非线性特征

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The barrier between substrate and field emitters can dominate the overall process of field emission. Carbon nanotube (CNT) films were synthesized by thermal chemical vapor deposition (CVD) on silicon substrate covered with a very thin SiO_2 layer as the interface contact barrier. The current versus applied voltage curve shows a high turn-on voltage, and the Fowler-Nordheim (FN) plot exhibits nonlinearity characteristics and departures from the original line and exhibits current saturation in the high-voltage region. However, the FN plot of CNTs grown on Si substrates without SiO_2 layers had no obvious critical voltage and approximately followed the FN law in our experimental voltage region. The reasons for the nonlinearity of FN plots of CNTs grown on a SiO_2 layer were discussed in terms of circuit theory.
机译:基板和场发射器之间的势垒可以主导整个场发射过程。通过热化学气相沉积(CVD)在覆盖有非常薄的SiO_2层作为界面接触阻挡层的硅基板上合成碳纳米管(CNT)膜。电流与施加电压的关系曲线显示出较高的开启电压,而Fowler-Nordheim(FN)图显示出非线性特性并偏离了原始线路,并在高压区域表现出电流饱和。然而,在没有SiO_2层的Si衬底上生长的CNT的FN图没有明显的临界电压,并且在我们的实验电压范围内近似遵循FN定律。从电路理论的角度讨论了在SiO_2层上生长的CNT的FN图非线性的原因。

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