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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Retention and re-emission behavior of hydrogen isotopes in SiC
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Retention and re-emission behavior of hydrogen isotopes in SiC

机译：SiC中氢同位素的保留和再排放行为

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摘要

The retention and re-emission behaviors of hydrogen isotopes in SiC have been studied by means of the elastic recoil detection (ERD) technique. Protium ions or deuterium ions were implanted into SiC sample at room temperature up to almost saturation. It was found that the concentrations of protium and deuterium in SiC reach values of 0.70 and 0.75, respectively. The ratio of the saturation concentration of H to D is calculated to be 0.92 by the solution of the mass balance equations. which is consistent with the experimental value of 0.93. Isochronal annealing for 10 min from room temperature to 1123 K was applied to deuterium implanted SiC sample to analyze the thermal release behavior. It was found that the deuterium re-emission takes place in three stages. The major second and third stages are ascribed to the re-emission as deuterium molecule of deuterium atoms bound to Si and C in SiC, respectively. The first stage might be the re-emission of deuterium-silicon compounds such as SiD2 or SiD4. Isothermal annealing at 573 K and 773 K were applied to evaluate the amounts of deuterium re-emitted in the first and second stages. The mass balance equations were also used to evaluate the effective molecular recombination rate constant. which was determined to be 7.3 x 10(-5). [References: 15]
机译：通过弹性反冲检测（ERD）技术研究了SiC中氢同位素的保留和再排放行为。在室温下将离子或氘离子注入SiC样品中，直至几乎饱和。发现SiC中的pro和氘的浓度分别达到0.70和0.75的值。通过质量平衡方程的解算出H与D的饱和浓度之比为0.92。与实验值0.93一致。从室温到1123 K等温退火10分钟，用于氘注入的SiC样品，以分析热释放行为。发现氘的再排放分为三个阶段。主要的第二和第三阶段归因于重排，因为氘原子分别与SiC中的Si和C结合的氘原子。第一个阶段可能是重新发射氘-硅化合物，例如SiD2或SiD4。分别在573 K和773 K下进行等温退火，以评估第一阶段和第二阶段重排的氘量。质量平衡方程还用于评估有效分子重组速率常数。确定为7.3 x 10（-5）。 [参考：15]

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