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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >The impact of the initial surface reconstruction on heteroepitaxial film growth and defect formation
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The impact of the initial surface reconstruction on heteroepitaxial film growth and defect formation

机译：初始表面重建对异质外延膜生长和缺陷形成的影响

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While it is well known that growth conditions such as temperature greatly affect defect incorporation in thin films, less is known about the direct effects of the surface reconstruction. In this work, we examine the effect of the initial surface reconstruction on defect incorporation in GaSb/GaAs(001) lattice mismatched films. The stress built up in GaSb films grown on As-terminated and Sb-terminated GaAs was monitored during film growth and shows that the total relaxation is similar in both films along the [110], but lower on the Sb-terminated surface along the [110]. These differences can be understood by examining the ability for the two surface terminations to accommodate strain. The resulting films show that the density of 3D islands is lower for the Sb-terminated surfaces, and that lattice mismatch strain is further accommodated by a 5° tilt. In contrast, the As-terminated surface contains both stacking faults and misfit dislocations. These results demonstrate the possibility to engineer specific defects into films by controlling the starting surface of film growth.
机译：众所周知，诸如温度之类的生长条件会极大地影响薄膜中缺陷的掺入，但是人们对表面重建的直接影响知之甚少。在这项工作中，我们检查了初始表面重建对GaSb / GaAs（001）晶格失配膜中缺陷掺入的影响。在膜生长过程中监测了在以As端接和以Sb端接的GaAs上生长的GaSb膜中积累的应力，结果表明，沿[110]的两层膜的总弛豫相似，但沿[[ 110]。通过检查两个表面终端承受应变的能力可以理解这些差异。所得的膜表明，对于Sb端接的表面，3D岛的密度较低，并且晶格失配应变还可以通过倾斜5°来适应。相反，以As端接的表面既包含堆垛层错，又包含错位错位。这些结果证明了通过控制膜生长的起始表面将特定缺陷工程化为膜的可能性。

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