Pressure and temperature dependent studies of GaNxAs1-x/GaAs quantum well structures

Klar PJ.; Heimbrodt W.; Koch J.; Stolz W.; Vicente PMA.; Saadi AMK.; Lindsay A.; O'Reilly EP.; Gruning H.

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Pressure and temperature dependent studies of GaNxAs1-x/GaAs quantum well structures

机译：GaNxAs1-x / GaAs量子阱结构的压力和温度依赖性研究

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The pressure and temperature dependence of quantum well transitions in GaNxAs1-x/GaAs quantum well structures with x(N) = 1.8% and various well widths grown by metal organic vapour phase epitaxy were studied by photomodulated reflectance (FR) spectroscopy. The quantum well transition energies and their pressure dependence can be well described by a ten-band k . p Hamiltonian. Comparing experiment and theory demonstrates that the band alignment of the quantum well structures is type I with a chemical valence band offset of about 30% +/- 5% for x(N) = 1.8%. The temperature coefficients of the quantum well states are to a good approximation independent of well width and considerably smaller than that of GaAs. [References: 18]

机译：通过光调制反射光谱研究了x（N）= 1.8％且金属有机气相外延生长的各种阱宽度的GaNxAs1-x / GaAs量子阱结构中量子阱跃迁的压力和温度依赖性。量子阱跃迁能及其压力依存关系可以用十个谱带k很好地描述。 p哈密顿量。比较实验和理论表明，量子阱结构的能带排列是I型，对于x（N）= 1.8％，化学价带偏移约为30％+/- 5％。量子阱态的温度系数具有良好的近似性，与阱宽度无关，并且比GaAs的温度系数小得多。 [参考：18]

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《Physica status solidi, B. Basic research》 |2001年第1期|共7页
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Klar PJ.; Heimbrodt W.; Koch J.; Stolz W.; Vicente PMA.; Saadi AMK.; Lindsay A.; O'Reilly EP.; Gruning H.;
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1. Pressure and temperature dependent studies of GaNxAs1-x/GaAs quantum well structures [J] . Klar PJ., Heimbrodt W., Koch J., Physica status solidi, B. Basic research . 2001,第1期

机译：GaNxAs1-x / GaAs量子阱结构的压力和温度依赖性研究
2. Temperature dependent surface photovoltage spectra of type I GaAs_(1-x)Sb_x/GaAs multiple quantum well structures [J] . P. Sitarek, J. Misiewicz, Y. S. Huang, Journal of Applied Physics . 2013,第7期

机译：I型GaAs_（1-x）Sb_x / GaAs多量子阱结构的温度相关表面光电压谱
3. Temperature dependent surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs double quantum well structures grown by metal organic vapor phase epitaxy [J] . C. H. Chan, J. D. Wu, Y. S. Huang, Journal of Applied Physics . 2009,第4期

机译：金属有机气相外延生长的高应变InGaAs / GaAs双量子阱结构的温度相关表面光电压光谱表征
4. Monte Carlo study of the temperature dependent performance of GaN versus GaAs terahertz quantum cascade structures [C] . Bellotti Enrico, Driscoll Kristina, Moustakas Theodore D., IEEE LEOS Annual Meeting Conference . 2008

机译：Monte Carlo对GaN的温度依赖性能的研究与Gaas Terahertz量子级联结构
5. Studies in chemical reaction engineering: (a) The generation of temperature- and pressure-dependent absolute rate constants, (b) Local and global optimization of complex models, and (c) Turbulent reactive flows. [D] . Venkatesh, Prasana Krishnamurthi. 1997

机译：化学反应工程研究：（a）生成与温度和压力有关的绝对速率常数，（b）复杂模型的局部和全局优化，以及（c）湍流。
6. Temperature dependent optical properties of single hierarchically self-assembled GaAs/AlGaAs quantum dots [O] . M Benyoucef, A Rastelli, OG Schmidt, 2006

机译：单个分层自组装的GaAs / AlGaAs量子点的温度相关光学特性
7. Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures [O] . Rimkus A, Pozingyte E, Nedzinskas R, 2016

机译：Inas-Gaas和Inas-InGaas-Gaas量子点异质结构的温度依赖性调制反射率和光致发光
8. High Pressure Study of GaAs - Al(x)Ga(1-x)As Quantum Wells at Low Temperatures [R] . Venkateswaran, U., Chandrasekhar, M., Chandrasekhar, H. R., 1987

机译：Gaas - al（x）Ga（1-x）作为低温量子阱的高压研究

Pressure and temperature dependent studies of GaNxAs1-x/GaAs quantum well structures

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