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首页> 外文期刊>Physica status solidi, B. Basic research >Resonant states in doped quantum wells
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Resonant states in doped quantum wells

机译：掺杂量子阱中的共振态

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Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance. [References: 12]
机译：共振态可能对异质结构器件的电子传输，噪声和光学特性产生重要影响。我们已经使用非变分方法来研究由量子阱内部和外部的浅施主形成的共振态。该方法允许我们评估共振状态以及矩阵元素（例如光学跃迁概率）的位置和宽度（寿命）。当将宽度与解析算子方法的结果进行比较时，发现了数量上的差异，这归因于后一种方法中的带内散射被忽略。我们还展示了当施主从最初的无限距离移入量子阱时，杂质态（局部和共振）如何演化。 [参考：12]

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