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首页> 外文期刊>Physica status solidi, B. Basic research >Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
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Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers

机译:GaAs:(Mn,Ga)As颗粒层的结构和磁性

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摘要

Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga_(0.92)Mn_(0.08)As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 8C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects andMnatoms in the substitutional and interstitial positions in as grown sample.
机译:通过在低温下对通过MBE法生长的Ga_(0.92)Mn_(0.08)As / GaAs层进行退火来制备GaAs:(Mn,Ga)As颗粒薄膜。退火在500或600 8℃下进行。人们普遍认为,根据温度的不同,这种处理应导致形成立方锌混合物或六方晶状的MnAs夹杂物。我们证明这种先验假设是没有道理的。形成的夹杂物的种类不仅取决于退火温度,还取决于生长样品中置换位置和间隙位置的缺陷和Mnatoms的数量。

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