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首页> 外文期刊>Physica status solidi, B. Basic research >Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
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Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation

机译：4H-SiC外延层的致命性缺陷和通过低能电子辐照控制的寿命

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摘要

Carrier lifetimes in n-type 4H-SiC epilayers have been investigated by differential microwave photoconductance decay measurements. Through a correlation study between lifetime and various deep levels, the Z(1/2) and/or EH6/7 centers have been identified as effective recombination centers. When the Z(1/2) (and EH6/7) concentration is higher than 10(13) cm(-3), the inverse carrier lifetime is in proportion to the trap concentration, and the lifetime increases with increasing excitation intensity (density of irradiated photons). Alternatively, other recombination processes limit the lifetime when the Z(1/2) concentration is less than 10(13) cm(-3). In this case, the carrier life-time is decreased by increasing the excitation intensity. Surface recombination and recombination in the substrate have been suggested based on numerical analyses as the other recombination paths. By controlling the Z(1/2) (and EH6/7) concentration by low-energy electron irradiation, lifetime control has been achieved. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译：n型4H-SiC外延层中的载流子寿命已通过差分微波光电导衰减测量进行了研究。通过寿命与各种深层水平之间的相关性研究，Z（1/2）和/或EH6 / 7中心被确定为有效的重组中心。当Z（1/2）（和EH6 / 7）浓度高于10（13）cm（-3）时，反向载流子寿命与陷阱浓度成正比，并且寿命随着激发强度（密度）的增加而增加的光子数）。或者，当Z（1/2）浓度小于10（13）cm（-3）时，其他重组过程会限制寿命。在这种情况下，通过增加激发强度来减少载流子寿命。基于数值分析，已经提出了基材中的表面重组和重组，作为其他重组途径。通过用低能电子辐射控制Z（1/2）（和EH6 / 7）的浓度，可以实现寿命控制。 （C）2008 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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