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首页> 外文期刊>Physica status solidi, B. Basic research >Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III–V, and II–VI materials
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Limiting Debye temperature behavior following from cryogenic heat capacity data for group-IV, III–V, and II–VI materials

机译:根据第IV,III-V和II-VI组材料的低温热容量数据,限制德拜的温度行为

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摘要

We perform analyses of cryogenic heat capacity data sets, that are available from thermo-physical literature for group-IV materials (diamond, Si, Ge, and 3C-SiC), a variety of III–V materials (BN, BP, BAs, GaN, GaP, GaAs, GaSb, InP, InAs, InSb), and several II–VI materials (ZnO, ZnS, ZnSe, CdS, and CdTe). A prominent new result of the present study consists above all in a general high-precision formula, QDT QD0 1 a2T2 a4T4 =3, for the limiting behavior of the Debye temperature in the liquid helium–hydrogen region. The actual magnitudes of limiting Debye temperatures, QDe0T, in combination with the associated (throughout positive) curve shape coefficients, a2 and a4, are given in unambiguous way in terms of the three lowest-order heat capacity coefficients involved by conventional Taylor series expansions for lattice heat capacities within the cryogenic range up to temperatures of order QDe0T=30. Among the variety of presently specified calorimetric QDe0T values, particularly those obtained for a series of wide-bandgap materials may be of considerable interest. These are about 1110K for 3C-SiC, 1860 for c-BN, 950K for BP, 592K for GaN, 429 or 392K for isotopically modified samples 64Zn16Oand 68Zn18O, respectively, 414Kfor natural ZnO, 349Kfor ZnS, 276Kfor ZnSe, and 236Kfor CdS.
机译:我们对低温热容量数据集进行分析,这些数据集可从热物理文献中获取,用于IV组材料(金刚石,Si,Ge和3C-SiC),多种III–V材料(BN,BP,BA, GaN,GaP,GaAs,GaSb,InP,InAs,InSb)和几种II–VI材料(ZnO,ZnS,ZnSe,CdS和CdTe)。本研究的一个突出的新结果首先在于一个通用的高精度公式QDT QD0 1 a2T2 a4T4 = 3,以限制液氦-氢区域中的德拜温度。根据传统的泰勒级数展开式所涉及的三个最低阶热容系数,以明确的方式给出了限制德拜温度的实际大小QDe0T以及相关的(整个正的)曲线形状系数a2和a4。低温范围内的晶格热容量直至温度QDe0T = 30。在当前指定的各种量热QDe0T值中,尤其是对于一系列宽带隙材料获得的值可能是相当感兴趣的。对于3C-SiC,分别约为1110K,对于c-BN为1860,对于BP为950K,对于GaN同位素为592K,对于同位素改性样品64Zn16O和68Zn18O分别为429K或392K,对于天然ZnO为414K,对于ZnS为349K,对于ZnSe为276K,对于CdS为236K。

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