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首页> 外文期刊>Physica status solidi, B. Basic research >Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties
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Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties

机译：半导体纳米晶体和嵌入式量子点：电子和光学性质

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摘要

A tight-binding model for semiconductor quantum dots (QD) consisting of a small gap semiconductor material A embedded within a larger gap material B is used to determine the bound, localized one-particle QD-states. The form and symmetry properties of these states and their dependence on form, size and composition of the QDs are discussed. The Coulomb and dipole matrix elements between these states are calculated so that a many-body Hamiltonian is derived describing the elctronic properties of the QDs and the coupling to an applied (optical) electric field. Truncating the many-particle Hilbert space by taking into account only a finite number of localized electron and hole states the many-body Hamiltonian can be solved exactly. The resulting excitation spectrum and optical properties are presented and discussed. The method is, in particular, applied to CdSe QDs embedded in ZnSe with zincblende structure, to CdSe nanocrystals, and to InN QDs embedded in GaN with wurtzite structure. For the latter case also the influence of an intrinsic piezoelectric field and of the special symmetry properties of the wurtzite structure are discussed.
机译：由嵌入在较大间隙材料B中的小间隙半导体材料A组成的半导体量子点（QD）的紧密绑定模型用于确定已绑定的局部单粒子QD状态。讨论了这些状态的形式和对称性及其对量子点形式，大小和组成的依赖性。计算这些状态之间的库仑和偶极矩阵元素，以便导出多体哈密顿量，描述了量子点的电子特性以及与所施加（光学）电场的耦合。通过仅考虑有限数量的局部电子和空穴态来截断多粒子希尔伯特空间，就可以精确求解多体哈密顿量。介绍并讨论了所得的激发光谱和光学性质。该方法尤其适用于嵌入具有闪锌矿结构的ZnSe中的CdSe QD，应用于CdSe纳米晶体以及嵌入具有纤锌矿结构的GaN中的InN QD。对于后一种情况，还讨论了固有压电场的影响以及纤锌矿结构的特殊对称性。

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