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首页> 外文期刊>Physica status solidi, B. Basic research >Band structure and effective mass of InN under pressure
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Band structure and effective mass of InN under pressure

机译:压力下InN的能带结构和有效质量

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摘要

Calculations of the electronic band structure and effective mass of InN are performed within the density functional theory by means of the linear muffin-tin-orbital method. The results show a pronounced nonparabolicity of the conduction band. Calculated variations of the highest occupied conduction band energy and electron effective mass with free electron concentration are presented and compared to available experimental data. Pressure effects are studied. Both the fundamental band gap and the electron effective mass increase with hydrostatic pressure, but due to the nonparabolic character of the conduction band of InN the pressure coefficient of T the effective mass decreases with electron concentration. Experimental verification of this behavior has been performed on three n-type samples of InN with different electron-concentrations. The measurements and calculations agree in the description of the dependence of effective mass and its pressure coefficient onelectron concentration. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:在密度泛函理论中,通过线性松饼-锡-轨道方法,计算了InN的电子能带结构和有效质量。结果表明导带具有明显的非抛物线性。提出了最高占据的导带能量和电子有效质量随自由电子浓度的计算变化,并与可用的实验数据进行了比较。研究了压力效应。基带隙和电子有效质量都随静水压力而增加,但是由于InN导带的非抛物线特性,T的压力系数随电子浓度而降低。对具有不同电子浓度的三个InN样品进行了这种行为的实验验证。测量和计算在描述有效质量及其压力系数对电​​子浓度的依赖性方面是一致的。 (C)2008 WILEY-VCH Verlag GmbH&Co. KGaA,Weinheim。

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