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首页> 外文期刊>Physica status solidi, B. Basic research >Quantum islands formation and optical properties of CdZnTe/ZnTe quantum wells grown by atomic layer epitaxy
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Quantum islands formation and optical properties of CdZnTe/ZnTe quantum wells grown by atomic layer epitaxy

机译:原子层外延生长的CdZnTe / ZnTe量子阱的量子岛形成和光学性质

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In this work we report on optical properties of CdZnTe/ZnTe quantum wells (QWs) grown by atomic layer epitaxy (ALE) and the formation of quantum island during the QWs growth. The photoluminescence (PL) emission of QWs at lower temperature (250 degrees C) consists of two peaks. From studying the dependence of the PL integrated emission with the excitation intensity, it is found that theses both PL features have different nature. The high-energy sharp peak is associated to the excitonic recombination in the CdZnTe/ZnTe alloy quantum well while the low-energy contributions (wide peak) are assigned to the recombination in the quantum islands (compositional fluctuations with high Cd molar fraction embedded inside the active zone of the QW). The temperature dependence of the PL FWHM, energy, and intensity confirm the enhancement of the quantum efficiency of optical recombination in quantum islands. The formation of quantum islands is more likely at lower growth temperature as evidenced by the optical properties of the QWs grown at different temperatures. Since the QWs growth is following an ALE procedure (Cd-Te-Zn-Te cycles), the existence of a Cd desorption induced by Zn exposure (Cd atoms are replaced by Zn atoms) leads to the formation of the compositional fluctuations (islands) on the growing surface at lower temperatures. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译:在这项工作中,我们报告了通过原子层外延(ALE)生长的CdZnTe / ZnTe量子阱(QWs)的光学性质以及在QWs生长期间形成的量子岛。较低温度(250摄氏度)下QW的光致发光(PL)发射由两个峰组成。通过研究PL积分发射与激发强度的关系,发现这两个PL特征具有不同的性质。高能尖峰与CdZnTe / ZnTe合金量子阱中的激子复合有关,而低能贡献(宽峰)与量子岛中的复合有关(具有高Cd摩尔分数的化合物涨落嵌入分子内部)。 QW的活动区域)。 PL FWHM,能量和强度的温度依赖性证实了在量子岛中光学复合的量子效率的提高。如在不同温度下生长的量子阱的光学性质所证明,在较低的生长温度下更有可能形成量子岛。由于QWs的生长遵循ALE程序(Cd-Te-Zn-Te循环),因此由于锌暴露(Cd原子被Zn原子取代)而引起的Cd解吸的存在会导致成分波动(孤岛)的形成。在较低温度下生长的表面上。 (c)2005 WILEY-VCH Verlag GmbH&Co. KGaA,Weinheim。

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