Metal–semiconductor transition in Sm_xMn_(1-x)S solid solutions

Sergey Aplesnin; Oxana Romanova; Anton Har’kov; Dmitrii Balaev; Michail Gorev; Alexander Vorotinov; Vladimir Sokolov; Andrey Pichugin

首页> 外文期刊>Physica status solidi, B. Basic research >Metal–semiconductor transition in Sm_xMn_(1-x)S solid solutions

【24h】

Metal–semiconductor transition in Sm_xMn_(1-x)S solid solutions

机译：Sm_xMn_（1-x）S固溶体中的金属-半导体跃迁

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The electrical resistivity of the Sm_xMn_(1-x)S (0.15≤x≤0.25) solid solutions in the temperature range of 80–300K was measured. Minimum and maximum in the temperature dependence of the resistivity were found, respectively, at T＝220Kfor x＝0.15 and at T＝100Kfor x＝0.2 compounds. This behavior is explained from the result of the mobility-edge movement, the disorder being due to elastic deformation and spin density fluctuations with short-range order. Metal–semiconductor phase transition versus concentration at x_c＝0.25 is observed. Resistivity is described by scattering electrons with acoustic phonon mode and with localized manganese spin. From the thermal expansion coefficient the compression of the lattice below the Ne′el temperature for Sm0.2Mn0.8S is found.

机译：在80-300K的温度范围内，测量了Sm_xMn_（1-x）S（0.15≤x≤0.25）固溶体的电阻率。在x ＝ 0.15的T ＝ 220K处，对于x ＝ 0.2的T ＝ 100K处，电阻率的温度依赖性最小和最大。从移动性边缘移动的结果解释了此行为，该混乱是由于弹性变形和短距离顺序的自旋密度波动引起的。在x_c ＝ 0.25时观察到金属-半导体相变与浓度的关系。电阻率是通过声子声子和局部锰自旋散射电子来描述的。根据热膨胀系数，发现对于Sm0.2Mn0.8S，在Ne'el温度以下晶格压缩。

著录项

来源
《Physica status solidi, B. Basic research》 |2012年第4期|共6页
作者
Sergey Aplesnin; Oxana Romanova; Anton Har’kov; Dmitrii Balaev; Michail Gorev; Alexander Vorotinov; Vladimir Sokolov; Andrey Pichugin;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类固体物理学;
关键词
Kondo effect; metal–semiconductor transition; semiconductors; variable-valence elements;

机译：近藤效应;金属-半导体跃迁;半导体;变价元素;

相似文献

外文文献
中文文献
专利

1. Metal–semiconductor transition in Sm_xMn_(1-x)S solid solutions [J] . Sergey Aplesnin, Oxana Romanova, Anton Har’kov, Physica status solidi, B. Basic research . 2012,第4期

机译：Sm_xMn_（1-x）S固溶体中的金属-半导体跃迁
2. Improvement of photocatalytic activity of (Ga_(1-x)Zn_x)(N_(1-x)O_x)solid solution for overall water splitting by co-loading Cr and another transition metal [J] . Kazuhiko Maeda, Kentaro Teramura, Nobuo Saito Journal of Catalysis . 2006,第2期

机译：通过共同负载Cr和另一种过渡金属来提高（Ga_（1-x）Zn_x）（N_（1-x）O_x）固溶体对全部水分解的光催化活性
3. Metal–nonmetal transition in the sphalerite-type solid solution [ZnSnSb_2]_(1-x)[2(InSb)]_x [J] . Andreas Tenga, F. Javier Garcia-Garcia, Yang Wu, Journal of Solid State Chemistry . 2009,第6期

机译：闪锌矿型固溶体[ZnSnSb_2] _（1-x）[2（InSb）] _ x中的金属-非金属过渡
4. Galvano-thermomagnetic properties of Bi{sub}(1-x)Sb{sub}x nanowires at semiconductor-semimetal transition induced buy elastic elongation [C] . A. Nikolaeva, P. Bodiul, L. Konopko, International Conference on Thermoelectrics . 2002

机译：在半导体 - 半型过渡诱导下的Bi {Sub}（1-x）Sb {Sub} X纳米线的GALVANO-热磁性特性
5. Investigation of x-bismuth(B')ozone-(1-x)lead titanate and x-bismuth(B',B'')ozone-(1-x)lead titanate perovskite solid solutions with high transition temperatures. [D] . Duan, Runrun. 2008

机译：高过渡温度下x-铋（B'）臭氧-（1-x）钛酸铅和x-铋（B'，B''）臭氧-钛酸铅钛酸钙固溶体的研究。
6. CuMoxW(1-x)O4 Solid Solution Display Visible Light Photoreduction of CO2 to CH3OH Coupling with Oxidation of Amine to Imine [O] . Chao Luo, Tian Yang, Qianfei Huang, 2020

机译：Cumoxw（1-x）O4固溶体显示CO 2的可见光光照与胺的氧化氧化至CH3OH偶联
7. First principles investigation of transition-metal doped group-IV semiconductors: R${_x}$Y$_{1-x}$ (R=Cr, Mn, Fe; Y=Si, Ge) [O] . Weng, Hongming, Dong, Jinming 2006

机译：过渡金属掺杂基团-IV的第一性原理研究半导体：R $ {_ x} $ Y $ _ {1-x} $（R = Cr，mn，Fe; Y = si，Ge）
8. Thermodynamic Properties of gamma-Uranium in the Formation of Solid Solutions with alpha-Transition Metals [R] . Vamberskii, I. V., Ivanov, A. E., Ivanov, O. S. 1984

机译：γ-铀在α-过渡金属固溶体形成过程中的热力学性质

Metal–semiconductor transition in Sm_xMn_(1-x)S solid solutions

摘要

著录项

相似文献

相关主题

期刊订阅