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首页> 外文期刊>Physica status solidi, B. Basic research >PERSISTENT SPECTRAL HOLE-BURNING PHENOMENON OF SEMICONDUCTOR QUANTUM DOTS
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PERSISTENT SPECTRAL HOLE-BURNING PHENOMENON OF SEMICONDUCTOR QUANTUM DOTS

机译：半导体量子点的持久光谱燃烧孔现象

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摘要

The persistent spectral hole-burning (PSHB) phenomenon is observed generally in nanocrystalline semiconductors, CdSe, CuCl, and CuBr, embedded in glass and crystal. In the inhomogeneously broadened exciton absorption spectra of these quantum dots, the spectral hole and its associated structure are produced by the narrow-band laser excitation and are conserved for more than several hours at 2 K. The hole depth grows in proportion to the logarithm of the burning fluence. Thermal-annealing and light-induced hole-filling phenomena are observed. The hole burning takes place by tunneling through potential barriers with broadly distributed barrier heights and thicknesses. Photoionization of dots and carrier tunneling into traps in the host are the most probable origins of the PSHB phenomenon. A possible application of the PSHB phenomenon is discussed. [References: 26]
机译：通常在嵌入在玻璃和晶体中的纳米晶体半导体，CdSe，CuCl和CuBr中观察到持久光谱空穴燃烧（PSHB）现象。在这些量子点的不均匀扩宽的激子吸收光谱中，光谱孔及其相关结构是由窄带激光激发产生的，并在2 K下守恒了几个小时以上。孔的深度与对数的对​​数成正比增长。燃烧通量。观察到热退火和光诱导的空穴填充现象。空穴的燃烧是通过隧穿势垒而实现的，势垒的势垒高度和厚度分布广泛。点的光电离和载流子隧穿进入宿主的陷阱是PSHB现象最可能的起源。讨论了PSHB现象的可能应用。 [参考：26]

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