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首页> 外文期刊>Physica status solidi, B. Basic research >Raman study of nano-crystalline Ge under high pressure
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Raman study of nano-crystalline Ge under high pressure

机译：高压下纳米Ge的拉曼研究

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We investigated high pressure behaviour of nano-crystalline Ge that is free of substrate up to 17 GPa using Raman scattering. Nano-crystalline Ge has been prepared by stain-etching of 100 oriented Ge wafer and then lifted off. Electron diffraction measurements revealed that after etching particles retain diamond structure of original mono-crystalline wafer. The Raman peak corresponding to zone-center optical phonons mode was found to be shifted at ambient conditions from 300 cm(-1) found in c-Ge to around 280(1) cm(-1) in nano-crystal line Ge. Particle size was estimated from Raman and TEM measurements to be similar to 5 nm. We observed no pressure transformation from the diamond to a high pressure phase as expected for bulk Ge (at around 10 GPa) in our Raman measurements. The pressure dependence of the Raman peak position was found to be highly nonlinear with d omega/dP = 3.9(1) cm(-1)/GPa and d(2)omega/dP(2) = -0.14(2) cm(-1)/GPa(2). We discuss the microscopic origins of observed high pressure behavior of nano-crystalline Ge. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译：我们使用拉曼散射研究了高达17 GPa的无衬底纳米晶体Ge的高压行为。纳米晶锗已通过对100个取向的锗晶片进行污点蚀刻而制备，然后剥离。电子衍射测量表明，蚀刻后颗粒保留了原始单晶晶片的金刚石结构。发现与区域中心光学声子模式相对应的拉曼峰在环境条件下从c-Ge中的300 cm（-1）转移到纳米晶体线Ge中的约280（1）cm（-1）。通过拉曼和TEM测量估计颗粒大小类似于5nm。我们在拉曼测量中未观察到大块锗（约10 GPa）所期望的从金刚石到高压相的压力转变。发现拉曼峰位置的压力依赖性是高度非线性的，d omega / dP = 3.9（1）cm（-1）/ GPa和d（2）omega / dP（2）= -0.14（2）cm（ -1）/ GPa（2）。我们讨论了观察到的纳米晶Ge高压行为的微观起源。 （c）2007年WILEY-VCH Verlag GmbH＆Co. KGaA，韦恩海姆。

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