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首页> 外文期刊>Physica status solidi, B. Basic research >Characterization of defects in silicon carbide by Raman spectroscopy
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Characterization of defects in silicon carbide by Raman spectroscopy

机译：用拉曼光谱表征碳化硅中的缺陷

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摘要

We demonstrate the application of Raman spectroscopy as an optical non-contact method for the characterization of silicon carbide (SiC). The Raman spectra provide information about the polytype and thus can give direct information about microscopic inclusions of hexagonal polytypes in 3C-SiC grown by chemical vapor deposition (CVD) after annealing at elevated temperatures. Polytype conversion sets in at a about 1700 degrees C and at higher temperatures eventually results in larger domains of 6H-SiC where twin boundaries act as barriers against a complete polytype conversion. We study shallow donor states of phosphorus- and nitrogen-doped SiC using low temperature electronic Raman spectroscopy. The various low frequency transitions observed in nitrogen doped SiC are assigned to the valley-orbit transitions of electrons in the 1s-ground states of donors that occupy inequivalent lattice sites. During vacuum annealing at elevated temperature graphitization of the SiC surface occurs. Raman spectroscopy is used to verify that under well controlled conditions a monoatomic graphene layer exists. We observe a phonon hardening of that layer compared to free standing graphene that we ascribe mainly to strain induced by different thermal expansion coefficients of graphite and SiC. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
机译：我们证明了拉曼光谱作为一种用于表征碳化硅（SiC）的光学非接触式方法的应用。拉曼光谱提供了有关多型的信息，因此可以直接提供有关在高温退火后通过化学气相沉积（CVD）生长的3C-SiC中六方多型的微观夹杂物的直接信息。多型转化在大约1700摄氏度的温度下开始，并在较高的温度下最终导致6H-SiC的更大区域，其中双边界充当了阻止完全多型转化的障碍。我们使用低温电子拉曼光谱研究磷和氮掺杂的SiC的浅施主态。在氮掺杂的SiC中观察到的各种低频跃迁被分配给电子的谷底轨道跃迁，该电子在占据不等晶格位置的供体的1s基态中。在高温下的真空退火期间，SiC表面发生石墨化。拉曼光谱用于验证在良好控制的条件下存在单原子石墨烯层。与独立石墨烯相比，我们观察到该层的声子硬化，这主要归因于石墨和SiC不同热膨胀系数引起的应变。 （C）2008 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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