...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica status solidi, B. Basic research >Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity
【24h】

Growth and structural characterization of pyramidal site-controlled quantum dots with high uniformity and spectral purity

机译：具有高度均匀性和光谱纯度的金字塔形位点控制量子点的生长和结构表征

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This work presents some fundamental features of pyramidal site-controlled InGaAs Quantum Dots (QDs) grown by metal– organic vapour phase epitaxy on patterned GaAs (111)B substrate. The dots self-form inside pyramidal recesses patterned on the wafer via pre-growth processing. The major advantage of this growth technique is the control it provides over the dot nucleation position and the dimensions of the confined structures onto the substrate. The fundamental steps of substrate patterning and the QD formation mechanism are described together with a discussion of the structural particulars. The post-growth processes, including surface etching and substrate removal, which are required to facilitate optical characterization, are discussed. With this approach extremely high uniformity and record spectral purity are both achieved.
机译：这项工作介绍了通过金属有机气相外延在图案化的GaAs（111）B衬底上生长的金字塔形定点InGaAs量子点（QD）的一些基本特征。通过预生长处理，在晶片上构图的金字塔形凹槽内部形成点。这种生长技术的主要优点是可以控制点成核位置和基板上受限结构的尺寸。基板构图和QD形成机理的基本步骤与结构细节的讨论一起进行了描述。讨论了有助于光学表征的后生长过程，包括表面蚀刻和衬底去除。通过这种方法，可以实现极高的均匀性和记录的光谱纯度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号