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首页> 外文期刊>Physica status solidi, B. Basic research >Examples for the integration of self-organized nanowires for functional devices by a fracture approach
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Examples for the integration of self-organized nanowires for functional devices by a fracture approach

机译：通过断裂方法将自组织纳米线集成到功能设备中的示例

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摘要

Simple and versatile methods to form nanowires on microchips are of interest for fundamental research and hold the potentials for an industrial fabrication. In this review article, one of these methods based on thin film fracture will be described introducing the experimental parameters and the potential for research. The advantages of the utilization of thin film cracks as a template for the nanowire formation are numerous: nanowire generation ready with contacts, a wide ranging freedom in the choice of materials, influence on the internal structure of the nanowire or the precise positioning on a microchip. A detailed discussion about the fabrication steps and some preliminary experiments revealing the possibilities of the fracture approach will be given for obtained metallic, semiconducting and anodized nanowires. In contrast to their macroscopic counterparts, the conductivity through the nanowires is entirely different. The influence of the surrounding gas atmospheres and the application of electrical fields demonstrate the applicability of these nanowires fabricated by using such a fracture approach. Perspective scanning electron microscopy micrograph of Au nanowires fabricated by thin film fracture approach between Au contact lines. The wires form a zigzag pattern on the thermally oxidized layer substrate on a silicon chip.
机译：简单而通用的在微芯片上形成纳米线的方法对于基础研究很感兴趣，并具有工业制造的潜力。在这篇综述文章中，将介绍这些基于薄膜断裂的方法中的一种，并介绍实验参数和研究潜力。利用薄膜裂纹作为纳米线形成的模板有很多优势：纳米线可随时与触点接触，材料选择范围广泛，对纳米线的内部结构有影响或在微芯片上的精确定位具有很大的自由度。关于制造步骤的详细讨论和一些初步的实验揭示了断裂方法的可能性，将用于获得的金属，半导体和阳极氧化纳米线。与它们的宏观对应物相比，通过纳米线的电导率完全不同。周围气体气氛的影响和电场的施加证明了通过使用这种断裂方法制造的这些纳米线的适用性。通过金接触线之间的薄膜断裂方法制备的金纳米线的透视扫描电子显微镜显微照片。导线在硅芯片上的热氧化层基板上形成锯齿形图案。

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