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首页> 外文期刊>Physica status solidi, B. Basic research >Growth of AlN nanowires by metal organic chemical vapour deposition
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Growth of AlN nanowires by metal organic chemical vapour deposition

机译：通过金属有机化学气相沉积法生长AlN纳米线

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摘要

AlN nanowires with a diameter of 20 nm were grown stochastically by the vapour-liquid-solid (VLS) method. At low temperatures below 1000 degrees C the Kirkendall effect during the alloying of aluminium and the catalyst resulted in the formation of three-dimensional nanostructures like lamellas and nano flowers. The high temperatures above 1000 degrees C, which are necessary to grow the nanowires complicate the control of their formation. Small catalyst droplets of 20 nm diameter are not stable due to their evaporation. Thus, in contrast to the classical approach to grow a single nano wire out of one droplet, we grew dense networks of nanowires inside larger 3D structures with diameters up to 5 gym. Depending on the growth temperature and the droplet geometry the nanowires inside of these networks are connected by angles of 90 degrees ("cubic") or 120 degrees ("hexagonal").
机译：通过蒸气-液体-固体（VLS）方法随机生长直径为20 nm的AlN纳米线。在低于1000摄氏度的低温下，铝和催化剂合金化过程中的柯肯德尔效应导致形成三维纳米结构，例如薄片和纳米花。生长纳米线所必需的高于1000摄氏度的高温使控制其形成变得复杂。直径为20 nm的催化剂小液滴由于蒸发而不稳定。因此，与从一个液滴中生长出单根纳米线的经典方法相反，我们在直径最大为5的更大3D结构内生长了密集的纳米线网络。根据生长温度和液滴的几何形状，这些网络内部的纳米线以90度（“立方”）或120度（“六边形”）的角度连接。

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