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首页> 外文期刊>Physica status solidi, B. Basic research >Negative differential resistance in magnetic tunnel junction systems
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Negative differential resistance in magnetic tunnel junction systems

机译：磁性隧道结系统中的负微分电阻

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摘要

We study the electrophysical properties of the Fe/MgO/Fe magnetic tunnel junctions (MTJ) with impurities. Sample structures are fabricated on top of fine-crystalline glass-ceramic substrates by e-beam evaporation in a relatively low vacuum (~10~(-4) Torr). The influence of the first magnetic layer fabrication conditions on the degradation of the MTJ is explained by the interlayer diffusion. Various models of electrophysical processes in MTJ on polycrystalline substrates are discussed. The current-voltage (I-V) characteristics of the fabricated structures are found to exhibit a region with negative differential resistance, similar to the one in tunneling diodes. We explain this phenomenon by the formation of excitons in the MgO layer modified by the conductive impurity atoms and their diffusion. The obtained results will be useful in the development of MRAM devices containing MTJs and tunneling diodes.
机译：我们研究了具有杂质的Fe / MgO / Fe磁性隧道结（MTJ）的电物理性质。样品结构是在相对较低的真空度（〜10〜（-4）托）下通过电子束蒸发在微晶玻璃陶瓷基板的顶部制造的。第一磁性层制造条件对MTJ的劣化的影响通过层间扩散来解释。讨论了多晶衬底上MTJ中各种电物理过程模型。发现所制造的结构的电流-电压（I-V）特性显示出具有负差分电阻的区域，类似于隧道二极管中的一个区域。我们通过在导电杂质原子修饰的MgO层中形成激子及其扩散来解释这种现象。获得的结果将有助于开发包含MTJ和隧道二极管的MRAM器件。

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