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首页> 外文期刊>Physica status solidi, B. Basic research >A XANES study of Cu valency in Cu-doped epitaxial ZnO
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A XANES study of Cu valency in Cu-doped epitaxial ZnO

机译：XANES研究铜掺杂外延ZnO中的铜价

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Near-edge X-ray absorption (XANES) at the Cu K-edge was employed to study the valency of Cu (a potential p-dopant) in Cu-doped ZnO grown by molecular beam epitaxy. For a similar chemical environment, a shift in the onset of absorption can be interpreted as being due to a change in effective valency. We have studied this shift for both as-grown and argon ambient annealed (1000degreesC,30 min) Cu-doped ZnO samples. The valency shift was measured against ab-initio standards calculated using feff8 as well as the standard samples CU2O (+1 valence) and CuO (+2 valence). It was found for the flux region explored here that as-incorporated Cu assumes an effective valence of approximately +1 which increases towards +2 upon a 1000degreesC argon ambient anneal. X-ray diffraction also shows the presence of both metallic Cu and Cu2O depending upon growth and annealing conditions. [References: 2]
机译：利用Cu K边缘的近边缘X射线吸收（XANES）研究了分子束外延生长的Cu掺杂ZnO中Cu的化合价。对于类似的化学环境，吸收开始的位移可以解释为是由于有效价态的变化。我们已经研究了退火和氩气环境退火（1000摄氏度，30分钟）掺杂铜的ZnO样品的这种转变。针对使用feff8计算的从头算标准物以及标准样品CU2O（+1价）和CuO（+2价）测量化合价偏移。对于此处探索的通量区域，发现结合态的Cu假定有效价约为+1，在1000℃的氩气环境退火中，其有效价朝+2增大。 X射线衍射还显示出取决于生长和退火条件的金属Cu和Cu 2 O的存在。 [参考：2]

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