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首页> 外文期刊>Physica status solidi, B. Basic research >Titanium vacancies in nonstoichiometric TiO2 single crystal
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Titanium vacancies in nonstoichiometric TiO2 single crystal

机译:非化学计量TiO2单晶中的钛空位

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摘要

The semiconducting properties of single-crystal TiO2 and their changes during prolonged oxidation at elevated temperatures and under controlled oxygen activity were monitored using measurements of electrical conductivity and thermo-electric power. Two kinetic regimes were revealed. Regime I-rapid oxidation, associated with the transport of oxygen vacancies(,) and Regime II prolonged oxidation, which corresponds to the transport of titanium vacancies. The present data represent the first documented evidence for the formation and transport of titanium vacancies in TiO2. This finding allows the processing of p-type TiO2 without the incorporation of aliovalent foreign ions.
机译:使用电导率和热电功率的测量来监测单晶TiO2的半导体特性及其在高温和受控氧活度下长时间氧化过程中的变化。揭示了两个动力学机制。 Regime I迅速氧化,与氧空位的运输有关,Regime II延长了氧化,这与钛空位的运输相对应。本数据代表了TiO2中钛空位的形成和迁移的第一个有据可查的证据。该发现使得能够在不引入铝价异物的情况下加工p型TiO 2。

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