Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

Wartak MS; Weetman P

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Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

机译：基于InGaAsN材料系统的耦合量子阱的光增益数值研究

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The optical gain of two coupled quantum wells fabricated from a new material system of InGaAsN/GaAs is studied by applying 10-band k.p Hamiltonian matrix. A self-consistent scheme which involves simultaneous solution of matrix Schrodinger and Poisson equations was applied. The optical gain spectra were obtained and analyzed for various values of nitrogen composition and barrier widths. They show optimum values for particular barrier width, although the variations are not significant. However, the magnitude of gain peak undergoes significant changes when varying nitrogen composition. The determined parameters and their variations can play significant role in designing practical structures based on InGaAsN/GaAs material systems. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

机译：通过应用10波段k.p哈密顿矩阵研究了由新材料InGaAsN / GaAs制造的两个耦合量子阱的光学增益。采用了包含矩阵薛定inger方程和泊松方程同时求解的自洽方案。获得了光学增益谱，并分析了氮组成和势垒宽度的各种值。尽管变化不大，但它们显示了针对特定势垒宽度的最佳值。但是，当氮含量变化时，增益峰的大小会发生显着变化。确定的参数及其变化在基于InGaAsN / GaAs材料系统的实际结构设计中可以发挥重要作用。（C）2008 WILEY-VCH Verlag GmbH＆Co. KGaA，Weinheim。

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《Physica status solidi, B. Basic research》 |2008年第4期|共5页
作者
Wartak MS; Weetman P;
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正文语种 eng
中图分类固体物理学;
关键词
DIFFERENTIAL GAIN; LASERS; MODEL;

机译：微分增益;激光;模型;

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1. Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system [J] . Wartak MS, Weetman P Physica status solidi, B. Basic research . 2008,第4期

机译：基于InGaAsN材料系统的耦合量子阱的光增益数值研究
2. 1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study [J] . Yong J.C.L., Rorison J.M., White I.H. IEEE Journal of Quantum Electronics . 2002,第12期

机译：1.3- / spl mu / m量子阱InGaAsP，AlGaInAs和InGaAsN激光材料增益：理论研究
3. Numerical Study of Multichannel Gain and Phase Recovery Dynamics of Quantum-Dot Semiconductor Optical Amplifiers by Solving Coupled Rate Equations [J] . Jungho Kim Japanese journal of applied physics . 2012,第12期

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4. Numerical studies of effective masses and optical gain in InGaAsN quantum-well structures with self-consistent effects [C] . M.S. Wartak, P. Weetman Physics and Simulation of Optoelectronic Devices XIV . 2006

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8. Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission. [R] . Volovik, B. V., Kovsh, A. R., Passenberg, W., 2000

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Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

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