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首页> 外文期刊>Physica status solidi, B. Basic research >Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots
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Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots

机译：自组织InGaAs / GaAs量子点的共振激发时间分辨光致发光研究

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摘要

Relaxation and capture processes in self-organized InGaAs/GaAs quantum dots (QDs) are studied by time-resolved photoluminescence spectroscopy under resonant excitation. Relaxation between the lowest confined states is shown to be strongly suppressed indicating a pronounced phonon bottleneck effect. In neutral QDs correlated relaxation processes dominate: exciton relaxation between low lying states and Auger-type processes for higher excited states, the latter providing an efficient means to populate the ground state upon non-resonant excitation. The relaxation-limited dynamics is attributed to the disk-like shape of the investigated QDs, suggesting the control of structural properties as possible pathway to device optimization. [References: 20]
机译：通过时间分辨光致发光光谱研究了共振激发下自组织InGaAs / GaAs量子点（QDs）中的弛豫和俘获过程。最低限度状态之间的松弛被显示出被强烈抑制，表明明显的声子瓶颈效应。在中性量子点中，相关的弛豫过程占主导：低躺状态之间的激子弛豫和高激发态的俄歇过程之间的激子弛豫，后者提供了一种在非共振激发下填充基态的有效手段。弛豫受限的动力学归因于所研究量子点的盘状形状，这表明控制结构特性是实现设备优化的可能途径。 [参考：20]

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