Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors

Voronkov Vladimir; Falster Robert

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Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors

机译：基于热供体的生成速率鉴定硅中快速扩散的氧种类

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Oxygen out-diffusion profiles reported at low temperature (400-500 degrees C) show a long-range oxygen migration. By the present analysis, the near-surface oxygen loss observed in these experiments is found to be well consistent with the known generation rate of thermal donors (TDs). Accordingly, the fast-diffusing oxygen species (FDS) - responsible for the long-distance oxygen diffusion - is a relatively large oxygen cluster (most likely, O-6) belonging to the TD family. The model developed here accounts for a persistent value of the outdiffusion distance - close to 2 mm for all temperatures and durations - and well reproduces the observed concentration profiles. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

机译：在低温（400-500摄氏度）下报告的氧气外扩散曲线显示了长期的氧气迁移。通过目前的分析，发现在这些实验中观察到的近地表氧气损失与已知的热供体（TD）的生成率非常一致。因此，负责长距离氧扩散的快速扩散氧物质（FDS）是属于TD族的相对较大的氧簇（很可能是O-6）。此处开发的模型考虑了向外扩散距离的持续值-在所有温度和持续时间内均接近2 mm-并很好地再现了观察到的浓度分布。（C）2015 WILEY-VCH Verlag GmbH＆Co.KGaA，Weinheim

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《Physica status solidi, B. Basic research》 |2015年第4期|共5页
作者
Voronkov Vladimir; Falster Robert;
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正文语种 eng
中图分类固体物理学;
关键词
diffusion; oxygen; silicon; thermal donors;

机译：扩散氧硅热供体;

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1. Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors [J] . Voronkov Vladimir, Falster Robert Physica status solidi, B. Basic research . 2015,第4期

机译：基于热供体的生成速率鉴定硅中快速扩散的氧种类
2. Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from theGeneration Kinetics of Thermal Donors [J] . V.V.Voronkov, G.I.Voronkova, A.V.Batunina, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2010,第Null期

机译：由热供体的生成动力学推导的硅中快速扩散型氧的性质
3. Influence of tin impurities of the generation and annealing of low temperature thermal oxygen donors in Czochralski silicon [J] . Neimash V. B Украинский физический журнал . 2000,第3期

机译：锡杂质对切克劳斯基硅中低温热氧供体的生成和退火的影响
4. Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors [C] . V. V. Voronkov, G. I. Voronkova, A. V. Batunina, International Meeting on Gettering and Defect Engineering in Semiconductor Technology . 2010

机译：热量发电动力学硅中快速扩散氧气种类的性质
5. Identification of phonon scattering mechanisms in silicon nitride by means of high-temperature thermal diffusivity measurements. [D] . McIntosh, Joseph James. 2001

机译：通过高温热扩散率测量鉴定氮化硅中的声子散射机理。
6. Silicon dioxide nanoparticles induce insulin resistance through endoplasmic reticulum stress and generation of reactive oxygen species [O] . Hailong Hu, Xingpei Fan, Qian Guo, 2019

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7. Dimers as Fast Diffusing Species for the Aggregation of Oxygen in Boron-Doped Czochralski Silicon: Formation of New Thermal Donors [O] . Besma Moumni, Abdelkadr Ben Jaballah, Selma Aouida, 2012

机译：二聚体作为掺硼的直拉硅中氧聚集的快速扩散物质：新热供体的形成

Identification of a fast diffusing oxygen species in silicon based on the generation rate of thermal donors

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