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首页> 外文期刊>Physica status solidi, B. Basic research >Optical interactions in the InSe/CdSe interface
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Optical interactions in the InSe/CdSe interface

机译：InSe / CdSe界面中的光学相互作用

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摘要

In this work, the structural and optical properties of the InSe/CdSe heterojunction are investigated by means of X-ray diffraction and ultraviolet-visible light spectrophotometry techniques. The hexagonal CdSe films that were deposited onto amorphous InSe and onto glass substrates at a vacuum pressure of 10(-5)mbar, exhibited interesting optical characteristics. Namely, the absorption, transmission, and reflection spectra that were recorded in the incident light wavelength range of 300-1100nm, for the InSe, CdSe, and InSe/CdSe interface revealed direct allowed transition energy bandgaps of 1.44, 1.85, and 1.52eV, respectively. The valence-band offset for the interface is found to be 0.36eV. On the other hand, the dielectric constant spectral analysis displayed a large increase in the real part of the dielectric constant associated with decreasing frequency below 500THz. In addition, the optical conductivity spectra that were analyzed and modeled in accordance with the Drude theory displayed a free-carrier average scattering time of 0.4fs and a drift mobility of 6.65cm(2)V(-1)s(-1) for the InSe/CdSe interface. The features of this interface nominate it as a promising member for the production of optoelectronic Schottky channels and as thin-film transistors.
机译：在这项工作中，通过X射线衍射和紫外可见光分光光度法研究了InSe / CdSe异质结的结构和光学性质。六方形CdSe薄膜在10（-5）mbar的真空压力下沉积到非晶InSe和玻璃基板上，表现出令人感兴趣的光学特性。也就是说，对于InSe，CdSe和InSe / CdSe界面，在300-1100nm的入射光波长范围内记录的吸收，透射和反射光谱显示出直接允许的跃迁能带隙为1.44、1.85和1.52eV，分别。发现该接口的价带偏移为0.36eV​​。另一方面，介电常数频谱分析显示，与低于500THz的频率相关的介电常数的实部大大增加。此外，根据德鲁德理论进行了分析和建模的光导谱显示，自由载流子的平均散射时间为0.4fs，漂移迁移率为6.65cm（2）V（-1）s（-1）。 InSe / CdSe界面。该接口的功能使其成为生产光电肖特基沟道和薄膜晶体管的有希望的成员。

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