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首页> 外文期刊>Physica status solidi, B. Basic research >Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
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Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

机译：铟意外掺入InGaN / GaN量子阱结构的GaN势垒中的研究

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摘要

High resolution transmission electron microscopy has been employed to investigate the impact of the GaN barrier growth technique on the composition profile of InGaN quantum wells (QWs). We show that the profiles deviate from their nominal configuration due to the presence of an indium tail at the upper interface of the QW. This indium tail, thought to be associated with a segregation effect from the indium surfactant layer, has been shown to strongly depend on the growth method. The effect of this tail has been investigated using a self-consistent Schrodinger-Poisson simulation. For the simulated conditions, a graded upper interface has been found to result in a decreased electron-hole wavefunction overlap of up to 31% compared to a QW with a rectangular profile, possibly leading to a decrease in radiative-recombination rate. Therefore, in order to maximize the efficiency of a QW structure, it is important to grow the active region using a growth method which leads to QW interfaces which are as abrupt as possible. The results of this experiment find applications in every study where the emission properties of a device are correlated to a particular active region design.
机译：高分辨率透射电子显微镜已被用于研究GaN势垒生长技术对InGaN量子阱（QWs）组成分布的影响。我们显示，由于在QW的上界面处存在铟尾，因此轮廓偏离了其标称配置。该铟尾被认为与铟表面活性剂层的偏析作用有关，已被证明强烈依赖于生长方法。已使用自洽Schrodinger-Poisson模拟研究了此尾巴的影响。对于模拟条件，已发现与具有矩形轮廓的QW相比，渐变的上界面可减少多达31％的电子-空穴波函数重叠，这可能导致辐射复合率降低。因此，为了最大化QW结构的效率，重要的是使用生长方法生长有源区域，该生长方法导致QW界面尽可能地突然。该实验的结果可在每项研究中找到应用，其中器件的发射特性与特定的有源区域设计相关。

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