Thick (similar to 1 mu m) p-type InxGa1-xN (x similar to 0.36) grown by MOVPE at a low temperature (similar to 570 degrees C)

Yamamoto A.; Hasan T. Md.; Kodama K.; Shigekawa N.; Kuzuhara M.

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Thick (similar to 1 mu m) p-type InxGa1-xN (x similar to 0.36) grown by MOVPE at a low temperature (similar to 570 degrees C)

机译：MOVPE在低温（类似于570摄氏度）下生长的厚（约1微米）p型InxGa1-xN（x近似于0.36）

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This paper reports the post-growth annealing effects of low-temperature grown Mg-doped InGaN. By using MOVPE, 1 mm-thick Mg-doped InxGa1-xN (x similar to 0.36) films are grown at 570 degrees C. In order to activate the Mg acceptors, grown samples are treated by the conventional furnace annealing (FA) or the rapid thermal annealing (RTA). In the case of the FA at 650 degrees C for 20 min, the InGaN film is phase-separated. On the other hand, the RTA at a temperature higher than 700 degrees C enables us to get p-type samples. By using the RTA at 850 for 20 s, p-type samples with a hole concentration 10(18) - 10(19) cm(-3) are successfully obtained without phase separation. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

机译：本文报道了低温生长的掺Mg的InGaN的生长后退火效应。通过使用MOVPE，在570摄氏度下生长1毫米厚的掺Mg的InxGa1-xN（x约等于0.36）膜。为了激活Mg受体，通过常规的炉内退火（FA）或高温退火处理生长的样品。快速热退火（RTA）。对于FA在650摄氏度下持续20分钟的情况，InGaN膜会发生相分离。另一方面，高于700摄氏度的温度下的RTA使我们能够获得p型样品。通过在850°C下使用RTA 20 s，可以成功获得空穴浓度为10（18）-10（19）cm（-3）的p型样品，而不会发生相分离。（C）2015 WILEY-VCH Verlag GmbH＆Co.KGaA，Weinheim

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《Physica status solidi, B. Basic research》 |2015年第5期|共4页
作者
Yamamoto A.; Hasan T. Md.; Kodama K.; Shigekawa N.; Kuzuhara M.;
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正文语种 eng
中图分类固体物理学;
关键词
annealing; doping; InGaN; magnesium; MOVPE; phase separation;

机译：退火掺杂InGaN镁MOVPE相分离;

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1. Thick (similar to 1 mu m) p-type InxGa1-xN (x similar to 0.36) grown by MOVPE at a low temperature (similar to 570 degrees C) [J] . Yamamoto A., Hasan T. Md., Kodama K., Physica status solidi, B. Basic research . 2015,第5期

机译：MOVPE在低温（类似于570摄氏度）下生长的厚（约1微米）p型InxGa1-xN（x近似于0.36）
2. p-type conduction in a C-doped (1-101)GaN grown on a 7-degree-off oriented (001)Si substrate by selective MOVPE [J] . T. Hikosaka, N. Koide, Y. Honda, Physica Status Solidi. C, Conferences and critical reviews . 2006,第6期

机译：通过选择性MOVPE在7度偏向（001）Si衬底上生长的C掺杂（1-101）GaN中的p型导电
3. Low-temperature (<= 600 degrees C) growth of high-quality InxGa1-xN (x similar to 0.3) by metalorganic vapor phase epitaxy using NH3 decomposition catalyst [J] . Yamamoto Akio, Kodama Kazuki, Matsuoka Takashi, Japanese journal of applied physics . 2017,第4期

机译：使用NH3分解催化剂通过金属有机气相外延低温生长（<= 600摄氏度）高质量InxGa1-xN（x近似于0.3）
4. Electrical characterization of MOVPE-grown p-type GaN: Mg against annealing temperature [C] . Shizuo Fujita, M.Funato, D-C.Park, Symposium on GaN and related alloys . 1999

机译：MOVPE生长的p型GaN的电特性：镁对退火温度的影响
5. Synthesis and properties of high critical transition temperature superconducting thin films and multilayers grown in situ by 90 degree off-axis sputtering. [D] . Eom, Chang-Beom. 1991

机译：通过90度离轴溅射原位生长的高临界转变温度超导薄膜和多层膜的合成和性能。
6. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE [O] . Xin Li, Matthew B. Jordan, Taha Ayari, -1

机译：MOVPE在晶圆级厚氮化硼层上的柔性金属-半导体-金属器件原型
7. Thick (~1 mm) p-type In x Ga 1–x N(x ~ 0.36) grown by MOVPE at a low temperature (~570 8C) [O] . Yamamoto A., Hasan T. Md., Kodama K., 2015

机译：通过mOVpE在低温（~570℃）下生长的厚（~1mm）p型In x Ga 1-x N（x~0.36）
8. IR Luminescence (1.6-1.9 mu m) of Compressive-Strained InGaAs/InP quantum Wells Grown by MOVPE. [R] . Sokolova, Z. N., Kovalenkov, O. V., Vinokurov, D. A., 1998

机译：用mOVpE生长的压缩应变InGaas / Inp量子阱的红外发光（1.6-1.9μm）。

Thick (similar to 1 mu m) p-type InxGa1-xN (x similar to 0.36) grown by MOVPE at a low temperature (similar to 570 degrees C)

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