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首页> 外文期刊>Physica status solidi, B. Basic research >Synthesis, crystal structure, and electronic properties of CeBiO3 oxide
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Synthesis, crystal structure, and electronic properties of CeBiO3 oxide

机译：CeBiO3氧化物的合成，晶体结构和电子性质

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Synthesis of CeBiO3 oxide is performed by a sol-gel method. Analysis of the powder X-ray diffraction ( XRD) pattern shows tetragonal unit cell with lattice parameters: a = 11.5030 angstrom, c = 5.4066 angstrom, space group P4(2)/mnm, and Z = 4. Average crystallite sizes determined by Scherrer equation similar to 14-47 nm show formation of nanoparticles in CeBiO3. On refinement of the unit-cell structure, the agreement factors are lowered to: R-p = 0.98; R-wp = 0.99; R-exp = 0.006. Observed DC elctrical conductivity activation energy, E-a similar to 0.62 eV shows the fairly strong semiconducting nature of CeBiO3. AC electrical conductivity results show electronic conductivity due to thermally activated hopping of Ce3+(4f(1)) electrons in CeBiO3. UV-VIS-NIR diffuse reflection absorption bands similar to 200-440 nm are due to transitions from Ce3+(4f(1)) ground state F-2(5/2) to five degeneracy lifted trigonal crystal field splitting of 5d levels of Ce3+ ions. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机译：CeBiO3氧化物的合成通过溶胶-凝胶法进行。粉末X射线衍射（XRD）图案的分析显示了具有晶格参数的四边形晶胞：a = 11.5030埃，c = 5.4066埃，空间群P4（2）/ mnm，Z =4。平均晶体尺寸由Scherrer确定类似于14-47 nm的方程表明CeBiO3中形成了纳米颗粒。在改进晶胞结构时，一致性因子降低至：R-p = 0.98; R-wp = 0.99; R-exp = 0.006。观察到的直流电的电导活化能E-a类似于0.62 eV，表明CeBiO3具有相当强的半导体性质。交流电导率结果显示，由于CeBiO3中Ce3 +（4f（1））电子的热激活跳跃引起的电子导电率。类似于200-440 nm的UV-VIS-NIR漫反射吸收带是由于从Ce3 +（4f（1））基态F-2（5/2）过渡到5d Ce3 +水平的五个简并提升的三角晶体场分裂离子。 （C）2015 WILEY-VCH Verlag GmbH＆Co.KGaA，Weinheim

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