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Low-temperature saturation of 2D variable-range-hopping conductivity induced by the gate covering the mesa edge

机译:覆盖台面边缘的栅极引起的二维变程跳变电导率的低温饱和

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摘要

The influence of the Schottky gate shape on the low temperature conductivity in gated Si-delta-doped GaAs was investigated. For samples with a gate covering the top and also the mesa edge of the structure, an unexpected low-temperature saturation of the variable-range-hopping conductivity (VRH) was observed at T < 1 K. We show that this effect is definitely connected with the gate covering the mesa edge. Sample resistivity in "saturation regime" increases with increasing negative gate voltage. Possible influence of a strong lateral electric field, induced by the gate covering the mesa edge, on the low temperature conductivity of depleted 2D layer is discussed. [References: 10]
机译:研究了肖特基栅极形状对栅Si-δ掺杂GaAs中低温电导率的影响。对于具有覆盖结构顶部和台面边缘的门的样品,在T <1 K时观察到了变程跳跃电导率(VRH)的意外低温饱和。大门覆盖台面边缘。 “饱和状态”下的样品电阻率随负栅极电压的增加而增加。讨论了由覆盖台面边缘的栅极引起的强横向电场对耗尽的2D层的低温电导率的可能影响。 [参考:10]

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