Induced defects in ZnSe and ZnTe by electron and proton irradiation and defect-annealing behaviour

Puff W.; Brunner S.; Balogh AG.; Mascher P.

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Induced defects in ZnSe and ZnTe by electron and proton irradiation and defect-annealing behaviour

机译：电子和质子辐照在ZnSe和ZnTe中引起的缺陷以及缺陷退火行为

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In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing in ZnSe and ZnTe. The nominally undoped samples were irradiated either with 1 MeV or 2 MeV electrons or with 3 MeV protons. The investigation was performed with positron lifetime and Doppler-broadening measurements. [References: 15]

机译：在这项研究中，我们讨论了电子和质子辐照后的微观结构变化，以及在ZnSe和ZnTe等时退火过程中辐射诱发的缺陷的热演化。标称未掺杂的样品用1 MeV或2 MeV电子或3 MeV质子辐照。使用正电子寿命和多普勒扩展测量进行了研究。 [参考：15]

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《Physica status solidi, B. Basic research》 |2002年第1期|共4页
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Puff W.; Brunner S.; Balogh AG.; Mascher P.;
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1. Induced defects in ZnSe and ZnTe by electron and proton irradiation and defect-annealing behaviour [J] . Puff W., Brunner S., Balogh AG., Physica status solidi, B. Basic research . 2002,第1期

机译：电子和质子辐照在ZnSe和ZnTe中引起的缺陷以及缺陷退火行为
2. A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation [J] . Das AGM, Nyamhere C, Auret FD, Surface & Coatings Technology . 2009,第17a18期

机译：p-Si中引入的缺陷的电子性质的比较研究：（i）电子束沉积Ti / Mo期间，（ii）质子辐照，和（iii）电子辐照
3. Electrical properties of defects in Ga-doped Ge irradiated with fast electrons and protons [J] . V.V. Emtsev, N. V. Abrosimov, V.V. Kozlovski, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：快速电子和质子辐照的Ga掺杂的Ge中的缺陷的电学性质
4. Radiation induced defects in Cu(In,Ga)Se₂ solarcells-comparison of electron and proton irradiation [C] . Rau U., Jasenek A., Schock H.W., International Conference on Wireless and Optical Communications, 2005. 14th Annual WOCC 2005 . 2005

机译：Cu（In，Ga）Se _{2 太阳的辐射诱导缺陷电子和质子辐射的细胞比较}
5. Properties of Type-II ZnTe/ZnSe Submonolayer Quantum Dots Studied via Excitonic Aharonov- Bohm Effect and Polarized Optical Spectroscopy. [D] . Ji, Haojie. 2016

机译：通过激子Aharonov-Bohm效应和偏振光谱研究了II型ZnTe / ZnSe亚单层量子点的性质。
6. Electron-Beam Irradiation Induced Regulation of Surface Defects in Lead Halide Perovskite Thin Films [O] . Binbin Jin, Ding Zhao, Fei Liang, 2021

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7. Effects of Energetic Electron and Proton Irradiation on Electron Emission Yield of Polyimide Induced by Electron and Photon [O] . Jiang WU, Akira MIYAHARA, Arifur KHAN, 2014

机译：能量电子和质子辐射对电子和光子诱导的聚酰亚胺电子排放产率的影响

Induced defects in ZnSe and ZnTe by electron and proton irradiation and defect-annealing behaviour

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