A GaInN quantum-well structure with an average In-concentration of 16% grown by metal organic chemical vapor deposition (MOCVD) on a SiC substrate. was studied by transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL) before and after all one-hour annealing treatment at 980 degreesC. Due to the heat treatment, the formation of In-rich clusters with extensions between 10 run and 100 nm and In-concentrations above 80% was observed. Nevertheless, the PL exhibits a blue shift in the PL-peak energy of about 90 meV compared to the as grown sample and do not show a significant influence of the In-rich clusters oil the emission wavelength. [References: 12]
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