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Fluctuations generated at semiconductor interfaces

机译：半导体接口处产生的波动

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摘要

We present a model for the description of the fluctuations generated by the exchange of carriers through a semiconductor interface. The model describes the fluctuations by means of a set of interfacial fluctuating terms, implemented into the corresponding fluctuating boundary conditions. Our formulation applies to both ideal as well as non-ideal interfaces, for which the presence of interface states is taken into account. The derivation of the model has been performed in the framework of non-equilibrium thermodynamics of systems with an interface, and with the help of the formalisms of the internal degrees of freedom and of the fluctuating hydrodynamics. Within the present theory, the description of the fluctuations generated by the exchange of carriers through a semiconductor interfaces relies, on the same grounds as the description of the fluctuations generated in bulk semiconductors. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 16]
机译：我们提供了一个模型，用于描述通过半导体接口交换载流子而产生的波动。该模型通过一组界面波动项来描述波动，这些波动项被实现为相应的波动边界条件。我们的公式既适用于理想界面，也适用于非理想界面，因此考虑了界面状态的存在。该模型的推导是在具有接口的系统的非平衡热力学框架内进行的，并且借助于内部自由度和波动的流体力学的形式学来进行。在本理论内，与通过在体半导体中产生的波动的描述相同的理由来描述由通过半导体界面的载流子交换产生的波动。 （C）1998 Elsevier Science B.V.保留所有权利。 [参考：16]

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