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Making high T-c higher: a theoretical proposal

机译：提高较高的T-c：一个理论建议

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There is considerable evidence that the highest T, obtainable in a copper-oxide plane is limited by the competition between two effects: On the one hand, as the concentration of doped holes, x, is increased, the pairing scale, which is related to the properties of a doped Mott insulator, decreases. On the other hand, the superfluid density, which controls the stiffness of the system to phase fluctuations, vanishes as x --> 0, and increases with increasing x. Optimal T-c is obtained at a crossover from a phase ordering dominated regime at small x to a pairing dominated regime at large x. If this description is valid, then higher T-c's can be obtained in an array of coupled planes with different doped hole concentrations, such that a high pairing scale is derived from the underdoped planes and a large phase stiffness from the optimally or overdoped ones. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 31]
机译：有大量证据表明，在氧化铜平面中可获得的最高T受两种效应之间的竞争所限制：一方面，随着掺杂空穴x浓度的增加，配对比例与掺杂的莫特绝缘子的特性降低。另一方面，将系统的刚度控制为相位波动的超流体密度在x-> 0时消失，并随着x的增加而增加。最佳T-c是从小x的相序主导态到大x的配对主导态交叉获得的。如果该描述是正确的，则可以在具有不同掺杂空穴浓度的耦合平面阵列中获得较高的T-c，从而可以从掺杂不足的平面获得较高的配对比例，并从最佳掺杂或过度掺杂的平面获得较大的相刚度。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：31]

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