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Low-frequency magnetoimpedance: domain wall magnetization processes

机译:低频磁阻:畴壁磁化过程

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A systematic study of the magnetization processes underpinning the giant magnetoimpedance phenomenon at low frequencies (f < 10 MHz) is presented. Instead of observing only the total impedance as the main parameter, in this paper we make use of the complex permeability formalism, by calculating permeabilities from complex impedance results. We first investigate the effects of the ac magnetic field amplitude (as produced by the ac current flowing through the sample). Results point to domain wall bulging as the dominant magnetization process for low ac field amplitude. As this amplitude increases, domain walls are unpinned and displaced, leading to hysteresis. As frequency increases, a clear relaxation behavior is observed. The effects of the de field are then studied. This parameter produces a damping of domain wall processes, leading to a serious decrease in permeability. Very high frequencies are also considered (f in the GHz range) from results recently published, which lead to a complete image of all the magnetization processes, since these results clearly show spin rotation and resonance. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 7]
机译:提出了对低频(f <10 MHz)的巨大磁阻现象基础的磁化过程的系统研究。在本文中,我们不是根据总阻抗作为主要参数,而是根据复阻抗结果计算磁导率,从而利用复磁导率形式。我们首先研究交流磁场振幅(由流过样品的交流电流产生)的影响。结果表明畴壁凸起是低交流磁场振幅的主要磁化过程。随着振幅的增加,畴壁将被钉住并移位,从而导致磁滞现象。随着频率增加,观察到明显的松弛行为。然后研究场的影响。此参数会产生畴壁过程的阻尼,从而导致渗透率严重降低。最近公布的结果也考虑到很高的频率(GHz范围内的f),这会导致所有磁化过程的完整图像,因为这些结果清楚地表明了自旋旋转和共振。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:7]

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