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Hydrogen segregation at the Al/Si(111) interface

机译:Al / Si(111)界面处的氢偏析

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The density depth profile of hydrogen trapped at an epitaxial solid-solid interface has been measured by neutron reflection. The interface was between a Si(111) substrate and an epitaxial film of Al 1500 Angstrom thick, into which hydrogen was introduced by low-energy implantion. The measurements, carried out at room temperature, indicated that a total of 0.7 x 10(16) H atoms/cm(2) were trapped at the interface. This number corresponds approximately to one atomic layer of liquid hydrogen; however, hydrogen was found to be spread over a thickness of 60 Angstrom. Cooling the sample from room temperature to 220 K did not significantly alter the distribution of hydrogen trapped at the interface. (C) 1998 Published by Elsevier Science B.V. [References: 6]
机译:已经通过中子反射测量了在外延固-固界面处捕获的氢的密度深度分布。界面在Si(111)衬底和1500埃厚的Al外延膜之间,通过低能注入将氢引入其中。在室温下进行的测量表明,界面处总共捕获了0.7 x 10(16)H原子/ cm(2)。这个数字大约相当于液态氢的一个原子层。然而,发现氢气散布在60埃的厚度上。将样品从室温冷却到220 K不会显着改变界面处捕获的氢的分布。 (C)1998年由Elsevier Science B.V.出版[参考文献:6]

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