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首页> 外文期刊>Physica, B. Condensed Matter >Defects in CuIn(Ga)Se_2 solar cell material characterized by positron annihilation: post-growth annealing effects
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Defects in CuIn(Ga)Se_2 solar cell material characterized by positron annihilation: post-growth annealing effects

机译：以正电子an没为特征的CuIn（Ga）Se_2太阳能电池材料缺陷：生长后退火效应

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摘要

Thin (approx 1 #mu#m) CuIn(Ga)Se_2 layers were grown by the rapid thermal processing technique under In-rich conditions. The as-grown samples were slightly p-type but highly compensated. They showed strong positron trapping in vacancies, indicated by a large valence annihilation parameter S. In order to identify the vacancies, we applied a novel PAS-method. In that, we compare the element-specific high-momentum part of the annihilation momentum distribution f(p) in CuInSe_2 with f(p) from the pure elements constituting the material (i.e. with Cu, In and Se). The results provide direct evidence that the vacancies in our as-grown CuInSe_2 layers are related to Cu vacancies. Annealing under Ar atmosphere did not alter the annihilation characteristics, i.e. it did not affect the vacancies. However, after annealing in air the samples become more heavily p-type and less compensated, whereas S is drastically reduced. PAS measurements as a function of temperature revealed that this effect is not due to a reduction of the vacancy concentration but due to the additional presence of negatively charged ions introduced by the annealing process. According to recent results, these ions are attributed to oxygen acceptors O_(Se). These new acceptors account for the increase of p-type conductivity after air annealing.
机译：在富In条件下，通过快速热处理技术生长了薄的（约1＃μm）CuIn（Ga）Se_2层。所生长的样品略呈p型，但得到了很高的补偿。他们在空位中显示出强大的正电子陷阱，这由大价态an灭参数S表示。为了识别空位，我们应用了一种新颖的PAS方法。在此，我们将构成材料的纯元素（即与Cu，In和Se的元素）中的CuInSe_2中的momentum灭动量分布f（p）的元素特定的高动量部分与f（p）进行了比较。结果提供了直接的证据，表明我们生长的CuInSe_2层中的空位与Cu空位有关。在Ar气氛下退火不会改变the没特性，即它不会影响空位。但是，在空气中退火后，样品变得更重p型，补偿也更少，而S则大大降低。 PAS测量值随温度的变化表明，这种影响并不是由于空位浓度的降低，而是由于退火过程中引入的带负电的离子的存在。根据最近的结果，这些离子归因于氧受体O_（Se）。这些新的受体说明了空气退火后p型电导率的增加。

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