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首页> 外文期刊>Physica, B. Condensed Matter >Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption
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Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

机译：半导体硫化锰铟薄膜的生长阶段及其对光吸收的影响。

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摘要

Manganese indium sulphide (MnInxS4) thin films within x range 2.0 greater than or equal to x greater than or equal to 1.0 were deposited by a simple chemical spray pyrolysis using an aqueous solution of MnCl2, InCl3 and (NH2)(2)CS in 1:2:4 molar ratio. X-ray diffraction on these films revealed the formation of cubic MnIn2S4 along with the secondary phases MnS2, In2S3, and InS. It has been observed that the concentration of InCl3 in solution affects the manganese indium sulphide film properties causing [Mn] deficiency on its reduction in the spray solution. As evidenced by X-ray diffraction studies InCl3, concentration in the spray solution affects the occurrence of free secondary phases of manganese sulphide and indium sulphide, leading to a wide variation in optical properties of the films. A variation in optical energy gap from 3.1 to 1.9 eV for as-deposited MnInxS4 films has been observed within 2.0 greater than or equal to x greater than or equal to 1.0 spray solution composition. A further reduction in the optical band gap up to 0.80 eV has been observed at post-deposition annealing under N-2 and H2S ambient atmosphere. (C) 2004 Elsevier B.V. All rights reserved.
机译：通过简单的化学喷雾热解法，使用MnCl2，InCl3和（NH2）（2）CS的水溶液于1中沉积x范围大于或等于x等于或大于1.0的锰铟硫化物（MnInxS4）薄膜。摩尔比为2：4。在这些膜上的X射线衍射表明，形成了立方MnIn2S4以及第二相MnS2，In2S3和InS。业已发现，溶液中InCl3的浓度会影响硫化锰铟薄膜的性能，导致喷雾溶液中还原[Mn]不足。正如X射线衍射研究InCl3所证明的那样，喷雾溶液中的浓度会影响硫化锰和硫化铟的自由第二相的出现，从而导致薄膜的光学性能发生很大变化。对于沉积后的MnInxS4薄膜，光能隙从3.1到1.9 eV的变化已在2.0大于或等于x大于或等于1.0的喷雾溶液成分内观察到。在N-2和H2S环境气氛下的沉积后退火中，光学带隙进一步减小至0.80 eV。 （C）2004 Elsevier B.V.保留所有权利。

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