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首页> 外文期刊>Physica, B. Condensed Matter >Angle-resolved photoemission study of the wurtzite GaN (0 0 0 1)
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Angle-resolved photoemission study of the wurtzite GaN (0 0 0 1)

机译：纤锌矿型GaN的角分辨光发射研究（0 0 0 1）

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摘要

The valence-electronic structure of the wurtzite GaN (0 0 0 1) surface grown by plasma-enhanced molecular beam epitaxy was investigated by angle-resolved photoemission spectroscopy with synchrotron radiation. The bulk bands along #GAMMA#A direction were mapped using normal-emission spectra in the 40-80 eV photon-energy range. On the whole, the experimental results agree with the calculated bands based on local density approximation within the upper valence band. On the other hand, in the higher-energy region of the valence band, it was found that the Ga 3d state is positioned at 15.7 eV below the valence band maximum, which is about 2 eV higher than those theoretically predicted. Off-normal-emission spectra were also measured along the #GAMMA#K and #GAMMA#M symmetry lines.
机译：通过角分辨光电子能谱和同步加速器辐射研究了等离子体增强分子束外延生长的纤锌矿GaN（0 0 0 1）表面的价电子结构。使用正常发射光谱在40-80 eV光子能量范围内绘制沿＃GAMMA＃A方向的体带。总体而言，实验结果与基于高价带内局部密度近似的计算带相吻合。另一方面，在价带的较高能量区域中，发现Ga 3d态位于价带最大值以下15.7eV，这比理论上预测的值高约2eV。还沿着＃GAMMA＃K和＃GAMMA＃M对称线测量了非正常发射光谱。

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