Deep acceptors in undoped GaN

M. A. Reshchikov; F. Shahedipour; R. Y. Korotkov; M. P. Ulmer; B. W. Wessels

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Deep acceptors in undoped GaN

机译：未掺杂GaN中的深受体

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摘要

Broad photoluminescence bands with maxima at 2.2, 2.5 and 2.9 eV in undoped GaN are studied. The bands are related to three deep acceptors, which are characterized by strong electron-phonon coupling. vibrational properties of the defects are reported.

机译：研究了在未掺杂的GaN中具有2.2、2.5和2.9 eV最大值的宽光致发光带。这些能带与三个深受体有关，其特征是强电子-声子耦合。报告了缺陷的振动特性。

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《Physica, B. Condensed Matter》 |1999年第0期|共4页
作者
M. A. Reshchikov; F. Shahedipour; R. Y. Korotkov; M. P. Ulmer; B. W. Wessels;
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原文格式 PDF
正文语种 eng
中图分类物理学;
关键词
GaN; photoluminescence; defects; electron-phonon coupling;

机译：氮化镓;光致发光;缺陷;电子-声子耦合;

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专利

1. Deep acceptors in undoped GaN [J] . M. A. Reshchikov, F. Shahedipour, R. Y. Korotkov, Physica, B. Condensed Matter . 1999,第0期

机译：未掺杂GaN中的深受体
2. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN [J] . In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, Journal of Applied Physics . 2016,第20期

机译：研究深能级中心确定未掺杂n-GaN外延层和晶体中的扩散长度
3. Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy [J] . Lee In-Hwan, Polyakov A.Y., Smirnov N.B., Journal of Applied Physics . 2014,第22期

机译：氢化物气相外延生长的未掺杂n-GaN薄膜中的深空穴陷阱
4. Study of deep acceptor states in undoped Semi-insulating GaAs with low carbon content by transient spectroscopy techniques [C] . Dubecky, F., Darmo, . 2001

机译：瞬态光谱技术研究低碳无掺杂半绝缘GaAs中的深受体态
5. Insight into the Design, Fabrication, and mm-Wave Power Performance of N-Polar GaN Deep Recess HEMTs [D] . Romanczyk, Brian R. 2018

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6. Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor [O] . A. K. Singh, K. P. O’Donnell, P. R. Edwards, -1

机译：GaN中Eu-Mg缺陷的迟滞光致变色开关链接了Mg受体的浅瞬态和深基态
7. Spectrally and spatially resolved cathodoluminescence of undoped/Mg-doped GaN core-shell nanowires: a local probe into activation of Mg acceptors in non-polar and semi-polar crystal faces [O] . Hortelano V., Martínez Óscar, Artús L., 2016

机译：光谱和空间分辨的未掺杂/掺杂镁的GaN核壳纳米线的阴极发光：对非极性和半极性晶面中的Mg受体活化的局部探针

Deep acceptors in undoped GaN

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