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首页> 外文期刊>Physica, B. Condensed Matter >Edge channels in integer and fractional quantum-Hall regime investigated by magnetocapacitance
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Edge channels in integer and fractional quantum-Hall regime investigated by magnetocapacitance

机译：通过磁电容研究整数和分数量子霍尔机制中的边缘通道

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摘要

We have evaluated the width of edge channels in the fractional and integer quantum-Hall (QH) regime by the magnetocapacitance measurement between a gate and two-dimensional electron system in GaAs/AlGaAs heterostructures. The frequency dependence of the magnetocapacitance between 100 Hz and 1 MHz has been measured at temperatures between 35 mK and 0.4 K. At the fractional QH regime, the total width of the edge channels is found to be 2.5 and 9 mu m at 35 mK at the QH plateaux of filling factor v = 1/3 and 2/3, respectively. In the integer QH regime, the temperature dependence of the edge channel width is almost flat in the range of 35 mK-0.4 K. At the QH plateau of v = 1 due to spin-splitting Landau level, the width of total edge channel is almost the same value with that at v = 2. The width at v = 3 is also comparable to that at v = 4, although the residual bulk conductivity of v = 3 is an order of magnitude larger than that of v = 4. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 5]
机译：我们通过在GaAs / AlGaAs异质结构中的栅极和二维电子系统之间的磁电容测量，评估了分数阶和整数量子霍尔（QH）机制中边缘通道的宽度。已经在35 mK和0.4 K之间的温度下测量了100 Hz和1 MHz之间的磁电容的频率依赖性。在分数QH体制下，在35 mK时，边缘通道的总宽度为2.5和9μm。填充因子v的QH平稳分别为1/3和2/3。在整数QH体制中，边缘通道宽度的温度依赖性在35 mK-0.4 K的范围内几乎是平坦的。由于自旋分裂Landau能级，在v = 1的QH平稳段时，总边缘通道的宽度为与v = 2时的值几乎相同。v = 3时的宽度也与v = 4时的宽度相当。尽管v = 3的剩余体电导率比v = 4时大。 C）1998 Elsevier Science BV保留所有权利。 [参考：5]

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