Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transitions

Nilsson HE.; Martinez A.; Sannemo U.; Hjelm M.; Bellotti E.; Brennan K.

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Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transitions

机译：蒙特卡洛模拟4H-SiC中高能空穴的传输，包括带间隧穿和带间光跃迁

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The high field hole transport in 4H-SiC has been studied using a full band Monte Carlo (MC) simulation model that includes band to band tunneling and allows mixing of the band states during carrier drift. Impact ionization coefficients along the c-axis direction have been extracted and compared with experimental data. It is shown that the band to band tunneling mechanism is crucial in order to explain experimental results. The carrier distribution function obtained from the MC simulations has been used to determine the breakdown luminescence spectra coming from interband transitions. Our results are in good agreement with the available experimental luminescence spectra for SiC polytypes, and the importance of including interband tunneling is clearly demonstrated. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 8]

机译：已经使用全频带蒙特卡罗（MC）模拟模型研究了4H-SiC中的高场空穴传输，该模型包括带间隧穿，并允许在载流子漂移期间混合能态。提取了沿c轴方向的碰撞电离系数，并将其与实验数据进行了比较。结果表明，带间隧穿机制对于解释实验结果至关重要。从MC模拟获得的载流子分布函数已用于确定来自带间跃迁的击穿发光光谱。我们的结果与SiC多型可用的实验发光光谱非常吻合，并且清楚地证明了包括带间隧穿的重要性。（C）2002 Elsevier Science B.V.保留所有权利。 [参考：8]

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《Physica, B. Condensed Matter》 |2002年第4期|共4页
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Nilsson HE.; Martinez A.; Sannemo U.; Hjelm M.; Bellotti E.; Brennan K.;
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1. Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transitions [J] . Nilsson HE., Martinez A., Sannemo U., Physica, B. Condensed Matter . 2002,第1a4期

机译：蒙特卡洛模拟4H-SiC中高能空穴的传输，包括带间隧穿和带间光跃迁
2. High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation:Full Band Versus Analytic Band Models [J] . F. M.Bufler, P.Graf, B.Meinerzhagen VLSI Design . 1998,第1a4期

机译：蒙特卡罗模拟应变硅和硅锗中的高场空穴输运：全谱带与解析谱带模型
3. Comment on ’’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’’ and on ’’Band‐structure dependent transport and impact ionization in GaAs’’ [J] . Journal of Applied Physics . 1982,第4期

机译：评论“使用蒙特卡洛方法和伪势能带结构模拟GaAs中的高场传输”和“ GaAs中依赖于谱带结构的传输和碰撞电离”
4. Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs [C] . Fischetti, M.V., Sano, . 1996

机译：Ge，Si和GaAs中电子和空穴的高能传输和碰撞电离的全频带Monte Carlo模拟
5. Quantum corrected full-band semiclassical Monte Carlo simulation research of charge transport in silicon, stressed silicon, and silicon-germanium MOSFETs. [D] . Fan, Xiaofeng. 2006

机译：量子校正的全频带半经典蒙特卡洛模拟研究，用于硅，应力硅和硅锗MOSFET中的电荷传输。
6. Spectroscopy on the B850 band of individual light-harvesting 2 complexes of Rhodopseudomonas acidophila. I. Experiments and Monte Carlo simulations. [O] . M Ketelaars, A M van Oijen, M Matsushita, 2001

机译：嗜酸红假单胞菌2个单个光捕获物的B850谱图。 I.实验和蒙特卡洛模拟。
7. High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models [O] . F. M. Bufler, P. Graf, B. Meinerzhagen 1998

机译：由蒙特卡罗模拟中应变Si和Sige中的高场孔运输：全带与分析乐队模型
8. Monte Carlo Simulations of C-Band Backscatter from Saline Ice Covered with Frost Flowers [R] . Yeang, C. P., Kulapant, P., Ding, K. H., 1997

机译：冰霜覆盖的盐水中C波段背向散射的monte Carlo模拟

Monte Carlo simulation of high field hole transport in 4H-SiC including band to band tunneling and optical interband transitions

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